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参数资料
| 型号： | PM30CNJ060 |
| 厂商： | Mitsubishi Electric Corporation |
| 英文描述： | FLAT-BASE TYPE INSULATED PACKAGE |
| 中文描述： | 平性基地型绝缘包装 |
| 文件页数： | 2/6页 |
| 文件大小： | 92K |
| 代理商： | PM30CNJ060 |
Jan. 2000
MITSUBISHI <INTELLIGENT POWER MODULES>
PM30CNJ060
FLAT-BASE TYPE
INSULATED PACKAGE
INTERNAL FUNCTIONS BLOCK DIAGRAM
V
CES
±
I
C
±
I
CP
P
C
T
j
The item defines the maximum junction temperature for the power elements (IGBT/Diode) of the IPM to ensure safe operation. However,
these power elements can endure junction temperature as high as 150
°
C instantaneously. To make use of this additional temperature al-
lowance, a detailed study of the exact application conditions is required and, accordingly, necessary information is requested to be provided
before use.
Collector-Emitter Voltage
Collector Current
Collector Current (Peak)
Collector Dissipation
Junction Temperature
V
D
= 15V, V
CIN
= 15V
T
C
= 25
°
C
T
C
= 25
°
C
T
C
= 25
°
C
V
A
A
W
°
C
MAXIMUM RATINGS
(Tj = 25
°
C, unless otherwise noted)
INVERTER PART
Symbol
Parameter
Condition
Ratings
600
30
60
83
–20 ~ +125
Unit
V
D
V
CIN
V
FO
I
FO
V
V
V
mA
CONTROL PART
Supply Voltage
Input Voltage
Fault Output Supply Voltage
Fault Output Current
Applied between : V
UP1
-V
UPC
V
VP1
-V
VPC
, V
WP1
-V
WPC
, V
N1
-V
NC
Applied between : U
P
-V
UPC
, V
P
-V
VPC
W
P
-V
WPC
, U
N
V
N
W
N
-V
NC
Applied between : F
O
-V
NC
Sink current at F
O
terminals
20
20
20
20
Symbol
Parameter
Condition
Ratings
Unit
W
P
NC
NC
NC
V
WP1
V
WPC
UN
VN
VN1
VNC
WN
Fo
N
W
V
P
U
V
P
V
VP1
V
VPC
U
P
V
UP1
V
UPC
OUT
Si
GND
Vcc
In
GND
OUT
Si
GND
Vcc
In
GND
O
UN
S
UN
O
WN
S
WN
O
VN
S
VN
Rfo
Fo
GND
Vcc
W
N
V
N
U
N
Rfo=1.5k
Tc
Tb
GND
OUT
Si
GND
Vcc
In
GND
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