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参数资料
| 型号： | PM50B5LB060 |
| 厂商： | Powerex Inc |
| 文件页数： | 4/8页 |
| 文件大小： | 0K |
| 描述： | MOD PV-IPM H-BRDG/CHOP 600V 50A |
| 标准包装： | 1 |
| 系列： | Intellimod™ |
| 类型： | IGBT |
| 配置： | 半桥 |
| 电流： | 50A |
| 电压： | 600V |
| 电压 - 隔离： | 2500VDC |
| 封装/外壳： | 模块 |
POWEREX, INC., 200 E. HILLIS STREET, YOUNGWOOD, PENNSYLVANIA 15697-1800 (724) 925-7272
PM50B5LA060 / PM50B5LB060
PHOTO VOLTAIC IPM
H-BRIDGE + 1 CHOPPER
50 AMPERES/600 VOLTS
ELECTRICAL AND MECHANICAL CHARACTERISTICS, T j = 25°C unless otherwise speci?ed
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
IGBT INVERTER PART
COLLECTOR-EMITTER SATURATION VOLTAGE
V CE(SAT)
V D = 15V, V CIN = 0V, I C = 50A,
—
1.5
—
VOLTS
PULSED, T J = 25°C
V D = 15V, V CIN = 0V, I C = 50A,
—
1.55
—
VOLTS
PULSED, T J = 125°C
DIODE FORWARD VOLTAGE
INDUCTIVE LOAD SWITCHING TIMES
COLLECTOR-EMITTER CUTOFF CURRENT
V EC
T ON
T RR
T C(ON)
T OFF
T C(OFF)
I CES
-I C = 50A, V CIN = 15V, V D = 15V
V D = 15V, V CIN = 0 ? 15V
V CC = 300V, T J = 125°C
INDUCTIVE LOAD (PER 1 ARM)
V CE = V CES , V CIN = 15V, T J = 25°C
V CE = V CES , V CIN = 15V, T J = 125°C
—
0.3
—
—
—
—
—
—
2.2
0.7
0.1
0.2
0.9
0.2
—
—
3.3
1.4
0.2
0.4
1.8
0.4
1.0
10
VOLTS
μS
μS
μS
μS
μS
MA
MA
CONVERTER PART
COLLECTOR-EMITTER SATURATION VOLTAGE
V CE(SAT)
V D = 15V, V CIN = 0V, I C = 50A,
—
1.5
—
VOLTS
PULSED, T J = 25°C
V D = 15V, V CIN = 0V, I C = 50A,
—
1.55
—
VOLTS
PULSED, T J = 125°C
DIODE FORWARD VOLTAGE
DIODE FORWARD VOLTAGE
COLLECTOR-EMITTER CUTOFF CURRENT
V EC
V FM
I CES
-I C = 50A, V CIN = 15V, V D = 15V
I F = 50A
V CE = V CES , V CIN = 15V, T J = 25°C
V CE = V CES , V CIN = 15V, T J = 125°C
—
—
—
—
2.2
1.7
—
—
3.3
2.7
1.0
10
VOLTS
VOLTS
MA
MA
NOTE 1: T C (UNDER THE CHIP) MEASUREMENT POINT
PACKAGE A
PACKAGE B
Y
X
BOTTOM VIEW
Y
X
BOTTOM VIEW
4
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相关代理商/技术参数 |
参数描述 |
|---|---|
| PM50B5LB060_11 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:FLAT-BASE TYPE INSULATED PACKAGE |
| PM50B6L1C060 | 制造商:Powerex Power Semiconductors 功能描述:MOD IPM H-BRIDGE CHOPP 50A 600V 制造商:Powerex Power Semiconductors 功能描述:IGBT Module 制造商:Powerex Power Semiconductors 功能描述:IGBT Module; DC Collector Current:50A; Collector Emitter Voltage Vces:1.9V; Collector Emitter Voltage V(br)ceo:600V; Leaded Process Compatible:Yes; Module Configuration:Six; Package / Case:90 x 50mm Module ;RoHS Compliant: Yes |
| PM50B6LA060 | 功能描述:MOD PV-IPM H-BRDG/2CHOP 600V 50A RoHS:是 类别:半导体模块 >> 功率驱动器 系列:Intellimod™ 标准包装:15 系列:SPM® 类型:FET 配置:三相反相器 电流:1.8A 电压:500V 电压 - 隔离:1500Vrms 封装/外壳:23-DIP 模块 |
| PM50B6LA060_09 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:FLAT-BASE TYPE INSULATED PACKAGE |
| PM50B6LB060 | 功能描述:MOD PV-IPM H-BRDG/2CHOP 600V 50A RoHS:是 类别:半导体模块 >> 功率驱动器 系列:Intellimod™ 标准包装:15 系列:SPM® 类型:FET 配置:三相反相器 电流:1.8A 电压:500V 电压 - 隔离:1500Vrms 封装/外壳:23-DIP 模块 |
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