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| 型号： | PM6681ATR |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 稳压器 |
| 英文描述： | 0.4 A DUAL SWITCHING CONTROLLER, QCC32 |
| 封装： | 5 X 5 MM, 1 MM HEIGHT, 0.50 MM PITCH, ROHS COMPLIANT, VFQFPN-32 |
| 文件页数： | 17/47页 |
| 文件大小： | 2762K |
| 代理商： | PM6681ATR |
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Device description
PM6681A
24/47
Figure 36.
Current waveforms in current limit conditions
Being fixed the valley threshold, the greater the current ripple is, greater the DC output
current is:
The valley current limit can be set with resistor RCSENSE:
Equation 7
(RDS(on) sensing technique)
Where ICSENSE = 100 A, RDS(on) is the drain-source on resistance of the low side switch.
Consider the temperature effect and the worst case value in RDS(on) calculation.
The accuracy of the valley current threshold detection depends on the offset of the internal
comparator (
V
OFF) and on the accuracy of the current generator(ICSENSE):
Equation 8
Where RSNS is the sensing element (RDS(on)).
PM6681A provides also a fixed negative peak current limit to prevent an excessive reverse
inductor current when the switching section sinks current from the load in PWM mode. This
negative current limit threshold is measured between PHASE and SGND pins, comparing
the magnitude drop on the PHASE node during the conduction time of the low side
MOSFET with an internal fixed voltage of 120 mV.
The negative valley-current limit INEG (if the device works in PWM mode) is given by:
Equation 9
Inductor current
Valley current threshold
DC current limit = maximum load
Current
Time
Maximum load current is
influenced by the inductor
current ripple
CSENSE
Lvalley
DSon
CSENSE
I
R
×
=
SNS
CSENSE
OFF
CSENSE
Lvalley
R
100
I
R
V
I
+
+
×
+
=
DSon
NEG
R
mV
120
I
=
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