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参数资料
| 型号： | PM75RL1B120 |
| 元件分类： | 运动控制电子 |
| 英文描述： | AC MOTOR CONTROLLER, 150 A, XFM19 |
| 文件页数： | 3/9页 |
| 文件大小： | 145K |
| 代理商： | PM75RL1B120 |
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75RL1B120
FLAT-BASE TYPE
INSULATED PACKAGE
May 2009
3
Parameter
Symbol
Supply Voltage Protected by
SC
Supply Voltage (Surge)
Storage Temperature
Isolation Voltage
Condition
VCC(surge)
Tstg
Viso
Ratings
VCC(PROT)
800
1000
–40 ~ +125
2500
Unit
V
°C
Vrms
V
VD = 13.5 ~ 16.5V
Inverter Part, Tj = +125
°C Start
Applied between : P-N, Surge value
60Hz, Sinusoidal, Charged part to Base, AC 1 min.
2.15
2.35
3.3
2.0
0.8
1.0
2.8
1.2
1
10
Min.
Typ.
Max.
Collector-Emitter Saturation
Voltage
Collector-Emitter Cutoff
Current
–IC = 75A, VD = 15V, VCIN = 15V
(Fig. 2)
Tj = 25
°C
Tj = 125
°C
ELECTRICAL CHARACTERISTICS (Tj = 25
°C, unless otherwise noted)
INVERTER PART
Parameter
Symbol
Condition
VCE(sat)
ICES
VEC
ton
trr
tc(on)
toff
tc(off)
Limits
—
0.3
—
1.65
1.85
2.3
0.8
0.3
0.4
1.2
0.4
—
Tj = 25
°C
Tj = 125
°C
FWDi Forward Voltage
Switching Time
VD = 15V, VCIN = 0V
15V
VCC = 600V, IC = 75A
Tj = 125
°C
Inductive Load
(Fig. 3,4)
VCE = VCES, VD = 15V
(Fig. 5)
VD = 15V, IC = 75A
VCIN = 0V, Pulsed
(Fig. 1)
TOTAL SYSTEM
V
mA
V
s
Unit
0.21
0.36
0.27
0.47
0.038
°C/W
Rth(j-c)Q
Rth(j-c)F
Rth(j-c)Q
Rth(j-c)F
Rth(c-f)
Inverter IGBT part (per 1 element)
(Note-1)
Inverter FWDi part (per 1 element)
(Note-1)
Brake IGBT part
(Note-1)
Brake FWDi upper part
(Note-1)
Case to fin, (per 1 module)
Thermal grease applied
(Note-1)
Symbol
Condition
Unit
Min.
—
Junction to case Thermal
Resistances
THERMAL RESISTANCES
Contact Thermal Resistance
(Note-1) TC (under the chip) measurement point is below.
Parameter
Limits
Typ.
Max.
UP
IGBT
27.8
–8.0
VP
WP
UN
VN
WN
BR
FWDi
27.8
1.0
IGBT
65.4
–8.0
FWDi
65.4
1.0
IGBT
87.4
–8.0
FWDi
87.4
1.0
IGBT
38.7
7.6
FWDi
38.7
–1.4
IGBT
54.5
7.6
FWDi
54.5
–1.4
IGBT
76.5
7.6
FWDi
76.5
–1.4
IGBT
18.5
–9.9
Di
18.5
5.4
arm
axis
X
Y
(unit : mm)
Bottom view
* If you use this value, Rth(f-a) should be measured just under the chips.
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相关代理商/技术参数 |
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| PM75RL1B120_11 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:FLAT-BASE TYPE INSULATED PACKAGE |
| PM75RLA060 | 功能描述:MOD IPM L-SERIES 600V 75A RoHS:是 类别:半导体模块 >> 功率驱动器 系列:Intellimod™ 标准包装:15 系列:SPM® 类型:FET 配置:三相反相器 电流:1.8A 电压:500V 电压 - 隔离:1500Vrms 封装/外壳:23-DIP 模块 |
| PM75RLA060_05 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:FLAT-BASE TYPE INSULATED PACKAGE |
| PM75RLA120 | 功能描述:MOD IPM L-SERIES 1200V 75A RoHS:是 类别:半导体模块 >> 功率驱动器 系列:Intellimod™ 标准包装:15 系列:SPM® 类型:FET 配置:三相反相器 电流:1.8A 电压:500V 电压 - 隔离:1500Vrms 封装/外壳:23-DIP 模块 |
| PM75RLA120_05 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:FLAT-BASE TYPE INSULATED PACKAGE |
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