参数资料
型号: PMBD7000,235
厂商: NXP Semiconductors
文件页数: 6/12页
文件大小: 258K
描述: DIODE HIGH SPEED SWITCHING SOT23
标准包装: 1
电压 - 在 If 时为正向 (Vf)(最大): 1.25V @ 150mA
电流 - 在 Vr 时反向漏电: 500nA @ 100V
电流 - 平均整流 (Io)(每个二极管): 215mA(DC)
电压 - (Vr)(最大): 100V
反向恢复时间(trr): 4ns
二极管类型: 标准
速度: 快速恢复 =< 500 ns,> 200mA(Io)
二极管配置: 1 对串联
安装类型: 表面贴装
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商设备封装: SOT-23-3
包装: 标准包装
产品目录页面: 1508 (CN2011-ZH PDF)
其它名称: 568-5031-6
PMBD7000 All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 4 — 16 September 2010 3 of 12
NXP Semiconductors
PMBD7000
Double high-speed switching diode
5. Limiting values
[1] Single diode loaded.
[2] Double diode loaded.
[3] Tj
=25°C prior to surge.
[4] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
[1] Single diode loaded.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per diode
VRRM
repetitive peak reverse
voltage
-100V
VR
reverse voltage - 100 V
IF
forward current
[1]
-215mA
[2]
-125mA
IFRM
repetitive peak forward
current
-450mA
IFSM
non-repetitive peak
forward current
square wave
[3]
tp
=1μs-4A
tp
=1ms - 1 A
tp
=1s - 0.5 A
Ptot
total power dissipation Tamb
25
°C
[1][4]
-250mW
Per device
Tj
junction temperature - 150
°C
Tamb
ambient temperature
?55 +150
°C
Tstg
storage temperature
?65 +150
°C
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-a)
thermal resistance from
junction to ambient
in free air
[1][2]
- - 500 K/W
Rth(j-t)
thermal resistance from
junction to tie-point
- - 360 K/W
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