参数资料
型号: PMEG3005ET,215
厂商: NXP Semiconductors
文件页数: 6/12页
文件大小: 123K
描述: SCHOTTKY RECT 20V 0.5A SOT23
产品目录绘图: SOT-23 Circuit
标准包装: 3,000
二极管类型: 肖特基
电压 - (Vr)(最大): 30V
电流 - 平均整流 (Io): 500mA(DC)
电压 - 在 If 时为正向 (Vf)(最大): 430mV @ 500mA
速度: 快速恢复 =< 500 ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 150µA @ 30V
电容@ Vr, F: 70pF @ 1V,1MHz
安装类型: 表面贴装
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商设备封装: TO-236AB
包装: 带卷 (TR)
其它名称: PMEG3005ET215-CHP
PMEGXX05ET_SER_2
? NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 13 January 2010 3 of 12
NXP Semiconductors
PMEGxx05ET series
0.5 A very low VF
MEGA Schottky barrier rectifiers in SOT23 package
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
6. Thermal characteristics
[1] For Schottky barrier diodes thermal run-away has to
be considered, as in some applications the reverse
power losses PR
are a significant part of the total power
losses. Nomograms for determining the reverse
power losses PR
and I
F(AV)
rating will be av
ailable on request.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
Table 5. Marking codes
Type number
Marking code[1]
PMEG2005ET P3*
PMEG3005ET P4*
PMEG4005ET P5*
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VR
reverse voltage
PMEG2005ET - 20 V
PMEG3005ET - 30 V
PMEG4005ET - 40 V
IF
forward current - 0.5 A
IFRM
repetitive peak forward current tp
1 ms; δ≤0.5 - 3.9 A
IFSM
non-repetitive peak forward
current
tp
= 8 ms square
wave
[1]
-10A
Ptot
total power dissipation Tamb
25
°C
[1]
- 280 mW
[2]
- 420 mW
Tj
junction temperature - 150
°C
Tamb
ambient temperature
?65 +150
°C
Tstg
storage temperature
?65 +150
°C
Table 7. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-a)
thermal resistance from
junction to ambient
in free air
[1][2]
--440K/W
[1][3]
--300K/W
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