参数资料
型号: PMEG3015EV,115
厂商: NXP Semiconductors
文件页数: 4/10页
文件大小: 104K
描述: SCHOTTKY RECT 30V 1.5A SOT666
标准包装: 4,000
二极管类型: 肖特基
电压 - (Vr)(最大): 30V
电流 - 平均整流 (Io): 1.5A(DC)
电压 - 在 If 时为正向 (Vf)(最大): 550mV @ 1.5A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 1mA @ 30V
电容@ Vr, F: 72pF @ 1V,1MHz
安装类型: 表面贴装
封装/外壳: SOT-563,SOT-666
供应商设备封装: SOT-666
包装: 带卷 (TR)
PMEG3015EV_2
? NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 4 February 2010 3 of 10
NXP Semiconductors
PMEG3015EV
30 V, 1.5 A ultra low VF
MEGA Schottky barrier rectifier
5. Limiting values
[1] For SOT666 only valid, if pins 3 and 4 are connected in parallel.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for cathode 1cm2.
6. Thermal characteristics
[1] For Schottky barrier diodes thermal run-away has to
be considered, as in some applications the reverse
power losses PR
are a significant part of the total power
losses. Nomograms for determining the reverse
power losses PR
and I
F(AV)
rating will be av
ailable on request.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for cathode 1cm2.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VR
reverse voltage - 30 V
IF
forward current Tsp
55
°C-1.5A
IFRM
repetitive peak forward current tp
1 ms; δ≤0.25
[1]
-4.5A
IFSM
non-repetitive peak forward
current
tp
= 8 ms; square
wave
[1]
-9.5A
Ptot
total power dissipation Tamb
25
°C
[2]
-0.31W
[3]
-0.58W
Tj
junction temperature - 150
°C
Tamb
ambient temperature
?65 +150
°C
Tstg
storage temperature
?65 +150
°C
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-a)
thermal resistance from junction
in free air
to ambient
[1][2]
[3]
- - 405 K/W
[4]
- - 215 K/W
Rth(j-sp)
thermal resistance from junction
to solder point
--80K/W
相关PDF资料
PDF描述
PMEG3020CEP,115 SCHOTTKY RECT 30V 2.0A SOD-128
PMEG3020EH,115 SCHOTTKY RECT 30V 2A SOD123F
PMEG3020EP,115 SCHOTTKY RECT 30V 2A SOD128
PMEG3020EPA,115 SCHOTTKY RECT 30V 2A SOT1061
PMEG3020ER,115 SCHOTTKY RECT 30V 2.0A SOD-123W
相关代理商/技术参数
参数描述
PMEG3020BEP 制造商:NXP Semiconductors 功能描述:DIODE SCHOTT RECT 30V 2A SOD128 制造商:NXP Semiconductors 功能描述:DIODE, SCHOTT RECT, 30V, 2A, SOD128 制造商:NXP Semiconductors 功能描述:DIODE, SCHOTT RECT, 30V, 2A, SOD128; Diode Type:Schottky; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:30V; Forward Current If(AV):2A; Forward Voltage VF Max:450mV; Forward Surge Current Ifsm Max:50A; No. of Pins:2;RoHS Compliant: Yes
PMEG3020BEP,115 功能描述:肖特基二极管与整流器 2A MEGA SCHOTTKY BARRIER RECTIFIER RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
PMEG3020BER 制造商:NXP Semiconductors 功能描述:DIODE SCHOTT RECT 30V 2A SOD123W 制造商:NXP Semiconductors 功能描述:DIODE, SCHOTT RECT, 30V, 2A, SOD123W 制造商:NXP Semiconductors 功能描述:DIODE, SCHOTT RECT, 30V, 2A, SOD123W; Diode Type:Schottky; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:30V; Forward Current If(AV):2A; Forward Voltage VF Max:520mV; Forward Surge Current Ifsm Max:50A ;RoHS Compliant: Yes
PMEG3020BER,115 功能描述:肖特基二极管与整流器 SCHOTTKY DIODE G4005CT/SOT2 RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
PMEG3020CEP 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:2 A low VF MEGA Schottky barrier rectifier