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参数资料
| 型号： | PNA3602L |
| 厂商： | PANASONIC CORP |
| 元件分类： | 光敏二极管 |
| 英文描述： | PIN Photodiode |
| 中文描述： | PIN PHOTO DIODE |
| 封装： | ROHS COMPLIANT PACKAGE-2 |
| 文件页数： | 1/2页 |
| 文件大小： | 41K |
| 代理商： | PNA3602L |
1
PNA3602L
PIN Photodiode
For optical control systems
PIN Photodiodes
Features
High quantum efficiency
High-speed response
Small size, thin side-view type package
Electro-Optical Characteristics
(Ta = 25C)
Parameter
Symbol
I
D
I
L
λ
P
t
r
, t
f*2
C
t
θ
Conditions
min
typ
0.1
max
10
Unit
nA
μ
A
nm
ns
pF
deg.
Dark current
Photo current
Peak sensitivity wavelength
Response time
Capacitance between pins
Acceptance half angle
V
R
= 10V
V
R
= 10V, L = 1000 lx
*1
V
R
= 10V
V
R
= 10V, R
L
= 50
V
R
= 10V, f = 1MHz
Measured from the optical axis to the half power point
16
850
2
6
45
*1
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2
Switching time measurement circuit
50
λ
P
= 800nm
t
d
: Delay time
t
r
: Rise time (Time required for the collector photo current
to increase from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector photo current
to decrease from 90% to 10% of its initial value)
Sig.IN
R
L
V
R
= 10V
Sig.OUT
(Input pulse)
(Output pulse)
10%
90%
t
d
t
r
t
f
Unit : mm
R0.6
1
2
R1.2
0.45
±
0.15
2-0.45
±
0.15
2-1.2
±
0.3
1.2
2.9
±
0.25
4.5
±
0.3
3
±
0
1
N
2
2
1
1.7
±
0.2
0.8
0.9
2.4
2.54
1: Anode
2: Cathode
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Symbol
V
R
P
D
T
opr
T
stg
Ratings
30
100
–25 to +85
–30 to +100
Unit
V
mW
C
C
Reverse voltage (DC)
Power dissipation
Operating ambient temperature
Storage temperature
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