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参数资料
| 型号： | PNA4S04M |
| 厂商： | PANASONIC CORP |
| 元件分类： | 光电元器件 |
| 英文描述： | Bipolar Integrated Circuit with Photodetection Function |
| 中文描述： | LOGIC OUTPUT PHOTO DETECTOR |
| 封装： | SURFACE MOUNT PACKAGE-4 |
| 文件页数： | 3/3页 |
| 文件大小： | 47K |
| 代理商： | PNA4S04M |
3
PNA4S01M, PNA4S02M, PNA4S03M, PNA4S04M
Photo IC
0
10
20
30
40
50
60
70
80
90
Directivity characteristics
Spectral sensitivity characteristics
100
80
60
40
20
Wavelength
λ
(nm)
R
700
800
900
1000
1100
1200
0
600
B.P.F
frequency characteristics
(PNA4S02M)
*
100
80
60
40
20
Carrier frequency (kHz)
*
The peaks for PNA4S01M, PNA4S08M
are all f
0
.
R
35
37
39
41
43
033
V
= 5V
Transmitter : Standard LED
Transmission unit used
L max
— Ta
120
80
40
100
60
20
Ambient temperature Ta (C )
R
0
20
60
80
40
100
0
– 20
20
90
100
80
70
60
50
40
30
R
相关PDF资料 |
PDF描述 |
|---|---|
| PNA4S11M | Bipolar Integrated Circuit with Photodetection Function |
| PNA4S12M | Bipolar Integrated Circuit with Photodetection Function |
| PNA4S13M | Bipolar Integrated Circuit with Photodetection Function |
| PNA4S14M | Bipolar Integrated Circuit with Photodetection Function |
| PNZ0300 | Silicon PIN Photodiodes |
相关代理商/技术参数 |
参数描述 |
|---|---|
| PNA4S11M | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Bipolar Integrated Circuit with Photodetection Function |
| PNA4S12M | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Bipolar Integrated Circuit with Photodetection Function |
| PNA4S13M | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Bipolar Integrated Circuit with Photodetection Function |
| PNA4S14M | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Bipolar Integrated Circuit with Photodetection Function |
| PNA4S87F | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Opto-Electronic Device - Photo Detectors - Photo ICs |
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