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参数资料
| 型号： | PNZ106 |
| 厂商： | PANASONIC CORP |
| 元件分类： | 光敏三极管 |
| 英文描述： | Silicon NPN Phototransistor |
| 中文描述： | PHOTO TRANSISTOR DETECTOR |
| 封装： | ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 1/3页 |
| 文件大小： | 340K |
| 代理商： | PNZ106 |
1
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Symbol
V
CEO
V
CBO
V
ECO
V
EBO
I
C
P
C
T
opr
T
stg
Ratings
30
40
5
5
20
100
–25 to +85
–30 to +100
Unit
V
V
V
V
mA
mW
C
C
Collector to emitter voltage
Collector to base voltage
Emitter to collector voltage
Emitter to base voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Phototransistors
PNZ106
(PN106)
Silicon NPN Phototransistor
For optical control systems
Features
High sensitivity
Fast response : t
r
= 3.5
μ
s (typ.)
Narrow directional sensitivity for effective use of light input
Signal mixing capability using base pin
Electro-Optical Characteristics
(Ta = 25C)
Parameter
Symbol
I
CEO
I
CE(L)
λ
P
θ
t
r*2
t
f*2
V
CE(sat)
Conditions
min
typ
1
0.6
800
10
3.5
5.0
0.2
max
100
Unit
nA
mA
nm
deg.
μ
s
μ
s
V
Dark current
Collector photo current
Peak sensitivity wavelength
Acceptance half angle
Rise time
Fall time
Collector saturation voltage
V
CE
= 10V
V
CE
= 10V, L = 100 lx
*1
V
CE
= 10V
Measured from the optical axis to the half power point
0.3
V
CC
= 10V, I
CE(L)
= 1mA, R
L
= 100
I
CE(L)
= 1 mA, L = 1000 lx
*1
0.4
*1
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2
Switching time measurement circuit
50
R
L
t
d
: Delay time
t
r
: Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
V
CC
Sig.OUT
Sig.IN
(Input pulse)
(Output pulse)
10%
90%
t
d
t
r
t
f
Glass lens
6
±
0
1: Emitter
2: Base
2: Collector
Unit : mm
10
±
02
10
±
015
4.6
±
0.15
2.54
±
0.25
5.75 max.
3-0.45
±
0.05
1
4
±
3
1
2
3
Note) The part number in the parenthesis shows conventional part number.
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相关代理商/技术参数 |
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|---|---|
| PNZ106(PN106) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:PNZ106 (PN106) - Silicon NPN Phototransistor |
| PNZ107 | 功能描述:PHOTO TRANS 900NM 10 DEG TO-18 RoHS:是 类别:传感器，转换器 >> 光学 - 光电检测器 - 光电晶体管 系列:* 标准包装:1,200 系列:- 电压 - 集电极发射极击穿（最大）:30V 电流 - 集电极 (Ic)（最大）:1mA 电流 - 暗 (Id)（最大）:100nA 波长:880nm 视角:24° 功率 - 最大:100mW 安装类型:通孔 方向:顶视图 封装/外壳:径向 |
| PNZ107(PN107) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Opto-Electronic Device - Photo Detectors - Phototransistors |
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| PNZ107F | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon NPN Phototransistors |
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