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参数资料
| 型号： | PNZ109F |
| 厂商： | PANASONIC CORP |
| 元件分类： | 光敏三极管 |
| 英文描述： | Silicon NPN Phototransistor |
| 中文描述： | PHOTO TRANSISTOR DETECTOR |
| 封装： | ROHS COMPLIANT, MTGFR103-002, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 46K |
| 代理商： | PNZ109F |
1
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Symbol
V
CEO
V
CBO
V
ECO
V
EBO
I
C
P
C
T
opr
T
stg
Ratings
20
30
3
5
30
150
–25 to +85
–30 to +100
Unit
V
V
V
V
mA
mW
C
C
Collector to emitter voltage
Collector to base voltage
Emitter to collector voltage
Emitter to base voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
PNZ109F
Silicon NPN Phototransistor
For optical control systems
Features
Flat window design which is suited to optical systems
Built-in filter to cutoff visible light for reducing ambient light noise
Peak sensitivity wavelength matched with infrared light emitting
devices :
λ
p
= 900 nm (typ.)
Fast response : t
r
= 8
μ
s (typ.)
Long lifetime, high reliability
Phototransistors
50
R
L
t
d
: Delay time
t
r
: Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
V
CC
Sig.OUT
Sig.IN
(Input pulse)
(Output pulse)
10%
90%
t
d
t
r
t
f
1: Emitter
2: Base
3: Collector
Unit : mm
4.6
±
0.15
Glass window
2.54
±
0.25
10
±
02
10
±
015
5.75 max.
3-0.45
±
0.05
4
±
0
1
4
±
3
1
3
2
Electro-Optical Characteristics
(Ta = 25C)
Parameter
Symbol
I
CEO
I
CE(L)
λ
P
θ
t
r*2
t
f*2
V
CE(sat)
Conditions
min
typ
0.05
max
2
Unit
μ
A
mA
nm
deg.
μ
s
μ
s
V
Dark current
Collector photo current
Peak sensitivity wave length
Acceptance half angle
Rise time
Fall time
Collector saturation voltage
V
CE
= 10V
V
CE
= 10V, L = 100 lx
*1
V
CE
= 10V
Measured from the optical axis to the half power point
V
CC
= 10V, I
CE(L)
= 1mA
R
L
= 100
I
CE(L)
= 1mA, L = 1000 lx
*1
0.3
900
40
8
9
0.3
0.6
*1
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2
Switching time measurement circuit
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相关代理商/技术参数 |
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| PNZ109F(PN109F) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:PNZ109F (PN109F) - Silicon NPN Phototransistor |
| PNZ109L | 功能描述:NPN PHOTOTRANSISTOR 900NM TO-18 RoHS:否 类别:传感器，转换器 >> 光学 - 光电检测器 - 光电晶体管 系列:* 标准包装:1,200 系列:- 电压 - 集电极发射极击穿（最大）:30V 电流 - 集电极 (Ic)（最大）:1mA 电流 - 暗 (Id)（最大）:100nA 波长:880nm 视角:24° 功率 - 最大:100mW 安装类型:通孔 方向:顶视图 封装/外壳:径向 |
| PNZ109L(PN109L) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:PNZ109L (PN109L) - Silicon NPN Phototransistor |
| PNZ115 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon NPN Phototransistor |
| PNZ115(PN115) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:PNZ115 (PN115) - Silicon NPN Phototransistor |
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