参数资料
型号: PNZ263L(PN263L-(NC))
英文描述: PNZ263L (PN263L-(NC)) - Darlington Phototransistor
中文描述: PNZ263L(PN263L -(北卡罗来纳州)) -达林顿光电晶体管
文件页数: 1/3页
文件大小: 56K
代理商: PNZ263L(PN263L-(NC))
1
PNZ263L
(PN263L-(NC))
Darlington Phototransistor
For optical control systems
Darlington Phototransistors
50
t
d
: Delay time
t
r
: Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
Sig.IN
R
L
V
CC
Sig.OUT
(Input pulse)
(Output pulse)
10%
90%
t
d
t
r
t
f
3.0
±
0.3
2-0.8 max.
2-0.5
±
0.15
0.3
±
0.15
1
2
2
1
(
N
0
2
1
0
1
0
3
±
0
Unit : mm
1: Collector
2: Emitter
2.54
1
2
1.4
±
0.2
0.5
0.9
1.95
±
0.25
1.1
R0.5
2-0.8 max.
+
G
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Symbol
V
CEO
V
ECO
I
C
P
C
T
opr
T
stg
Ratings
20
5
30
100
–25 to +80
–30 to +100
Unit
V
V
mA
mW
C
C
Collector to emitter voltage
Emitter to collector voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Electro-Optical Characteristics
(Ta = 25C)
Parameter
Symbol
I
CEO
S
IR*1
λ
P
θ
t
r
, t
f*2
V
CE(sat)
Conditions
min
typ
0.1
200
850
25
150
0.7
max
0.5
Unit
μ
A
μ
A
nm
deg.
μ
s
V
Dark current
Sensitivity to infrared emitters
Peak sensitivity wavelength
Acceptance half angle
Response time
Collector saturation voltage
V
CE
= 10V
V
CE
= 10V, H = 3.75
μ
W/cm
2
V
CE
= 10V
Measured from the optical axis to the half power point
V
CC
= 10V, I
C
= 1mA, R
L
= 100
I
C
= 100
μ
A, H = 3.75
μ
W/cm
2
60
1.5
*1
Measurements were made using infrared light (
λ
= 940 nm) as a light source.
*2
Switching time measuring circuit
Features
Darlington output, high sensitivity
Small size, thin side-view type package
Adoption of visible light cutoff resin
Note) The part number in the parenthesis shows conventional part number.
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