EPA040A-70 国外现货 01年批号 真是库存 价格实惠

UPDATED 11/22/2004 High EffICiency Heterojunction Power FET   Specifications are subject to change without notice.   Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 1 of 2    Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised November 2004                        FEATURES   ? NON-HERMETIC LOW COST CERAMIC 70MIL PACKAGE   ? +25.5 dBm OUTPUT POWER AT 1dB COMPRESSION   ? 7.0 dB POWER GAIN AT 12GHz   ? 0.3 x 800 MICRON RECESSED “MUSHROOM” GATE   ? Si3N4 PASSIVATION   ? ADVANCED EPITAXIAL HETEROJUNCTION PROFILE   PROVICES EXTRA HIGH POWER EFFICIENCY AND    HIGH RELIABILITY            ELECTRICAL CHARACTERISTICS (Ta = 25°C) Caution! ESD sensitive device.   SYMBOL PARAMETERS/TEST CONDITIONS1   MIN TYP MAX UNITS  21.5 23.5 P1dB Output Power at 1dB Compression f = 12GHz   VDS = 6V, IDS ≈ 50% IDSS f = 18GHz 23.5 dBm   9.0 10.5 G1dB Gain at 1dB Compression f = 12GHz   VDS = 6V, IDS ≈ 50% IDSS f = 18GHz 7.0 dB   PAE Power Added Efficiency at 1dB Compression   VDS = 6V, IDS ≈ 50% IDSS f = 12GHz 45 %   IDSS Saturated Drain Current VDS = 3 V, VGS = 0 V 70 120 160 mA   GM Transconductance VDS = 3 V, VGS = 0 V 80 130 mS   VP Pinch-off Voltage VDS = 3 V, IDS = 1.0 mA -1.0 -2.5 V   BVGD Drain Breakdown Voltage IGD = 1.0mA -9 -15 V   BVGS Source Breakdown Voltage IGS = 1.0mA -6 -14 V   RTH Thermal Resistance 250* o  C/W   Notes: * Overall Rth depends on case mounting.      MAXIMUM RATINGS AT 25OC   SYMBOL PARAMETERS ABSOLUTE1   CONTINUOURS2     VDS Drain to Source Voltage 10 V 6 V   VGS Gate to Source Voltage -6 V -3 V   IDS Drain Current Idss 75 mA   IGSF Forward Gate Current 20 mA 3 mA   PIN Input Power 20 dBm @ 3dB compression   PT Total Power Dissipation 550mW 455mW   TCH Channel Temperature 175°C 150°C   TSTG Storage Temperature -65/+175°C -65/+150°C