Features
Floatingchanneldesignedforbootstrapoperation
Fullyoperationalto+600V
Toleranttonegativetransientvoltage–dV/dtimmune
Gatedrivesupplyrangefrom10Vto20V
Undervoltagelockoutforbothchannels
3.3V,5Vand15VinputlogICcompatible
Cross-conductionpreventionlogic
Matchedpropagationdelayforbothchannels
HighsideoutputinphasewithINinput
Internal530nsdead-time
Lowerdi/dtgatedriverforbetternoiseimmunity
Shutdowninputturnsoffbothchannels
Integratedbootstrapdiode
RoHScompliant
Description
TheIRS2609Disahighvoltage,highspeedpower
MOSFETandIGBTdriverswithdependenthighandlow
sidereferencedoutputchannels.ProprietaryHVICandlatch
immuneCMOStechnologiesenableruggedizedmonolithic
construction.ThelogicinputiscompatiblewithStandard
CMOSorLSTTLoutput,downto3.3Vlogic.Theoutput
driversfeatureahighpulsecurrentbufferstagedesigned
forminimumdrivercross-conduction.Thefloatingchannel
canbeusedtodriveanN-channelpowerMOSFETorIGBT
inthehighsideconfigurationwhichoperatesupto600V.