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参数资料
| 型号： | PS11012 |
| 元件分类： | 运动控制电子 |
| 英文描述： | AC MOTOR CONTROLLER, 8 A, DFM40 |
| 文件页数： | 6/6页 |
| 文件大小： | 539K |
| 代理商： | PS11012 |
MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module>
PS11012
FLAT-BASE TYPE
INSULATED TYPE
Jan. 2000
R
UP,VP,WP,UN,VN,WN,Br
F01,F02,F03,CL
CU,CV,CW
GND(Logic)
ASIPM
5V
CPU
R
5.1k
10k
0.1nF
on
0
VPN
DC-Bus voltage
Control voltage supply
Boot-strap voltage
N-Side input signal
P-Side input signal
Brake input signal
FO1 output signal
VDB
VCIN(N)
VCIN(P)
VCIN(Br)
FOI
VDH
b)
a)
PWM starts
Fig. 8 INVERTER OUTPUT ANALOGUE CURRENT SENSING AND SIGNALING CHART
Fig. 10 RECOMMENDED I/O INTERFACE CIRCUIT
N-side IGBT Current
N-side FWDi Current
t(hold)
td(read)
Delay time
+ICL
–ICL
on
off
on
off
0
on
off
0
Ref
VCIN
V(hold)
IC
(VS)
VC
VCL
Fig. 9 START-UP SEQUENCE
Normally at start-up, Fo and CL output signals will be pulled-up
High to Supply voltage (OFF level); however, FO1 output may fall to
Low (ON) level at the instant of the first ON input pulse to an N-Side
IGBT. This can happen particularly when the boot-strap capacitor is
of large size. FO1 resetting sequence (together with the boot-strap
charging sequence) is explained in the following graph
a) Boot-strap charging scheme :
Apply a train of short ON pulses at all N-IGBT input pins for ad-
equate charging (pulse width = approx. 20
s number of pulses =10
~ 500 depending on the boot-strap capacitor size)
b) FO1 resetting sequence:
Apply ON signals to the following input pins : Br
→ Un/Vn/Wn →
Up/Vp/Wp in that order.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| PS11013 | 功能描述:MOD IPM 3PHASE IGBT 600V 8A RoHS:否 类别:半导体模块 >> 功率驱动器 系列:- 标准包装:15 系列:SPM® 类型:FET 配置:三相反相器 电流:1.8A 电压:500V 电压 - 隔离:1500Vrms 封装/外壳:23-DIP 模块 |
| PS11014 | 功能描述:MOD IPM 3PHASE IGBT 600V 15A RoHS:否 类别:半导体模块 >> 功率驱动器 系列:- 标准包装:15 系列:SPM® 类型:FET 配置:三相反相器 电流:1.8A 电压:500V 电压 - 隔离:1500Vrms 封装/外壳:23-DIP 模块 |
| PS11015 | 功能描述:MOD IPM 3PHASE IGBT 600V 20A RoHS:否 类别:半导体模块 >> 功率驱动器 系列:- 标准包装:15 系列:SPM® 类型:FET 配置:三相反相器 电流:1.8A 电压:500V 电压 - 隔离:1500Vrms 封装/外壳:23-DIP 模块 |
| PS11016 | 功能描述:MOD IPM 3PHASE IGBT 600V 30A RoHS:否 类别:半导体模块 >> 功率驱动器 系列:- 标准包装:15 系列:SPM® 类型:FET 配置:三相反相器 电流:1.8A 电压:500V 电压 - 隔离:1500Vrms 封装/外壳:23-DIP 模块 |
| PS11017 | 功能描述:MOD IPM 3PHASE IGBT 600V 50A RoHS:否 类别:半导体模块 >> 功率驱动器 系列:- 标准包装:15 系列:SPM® 类型:FET 配置:三相反相器 电流:1.8A 电压:500V 电压 - 隔离:1500Vrms 封装/外壳:23-DIP 模块 |
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