参数资料
型号: PS11017
厂商: Powerex Inc
文件页数: 3/6页
文件大小: 0K
描述: MOD IPM 3PHASE IGBT 600V 50A
标准包装: 2
类型: IGBT
配置: 三相反相器
电流: 50A
电压: 600V
电压 - 隔离: 2500Vrms
封装/外壳: 36-DIP 模块
MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module>
PS11017
FLAT-BASE TYPE
INSULATED TYPE
TOTAL SYSTEM
Symbol
T j
T stg
T C
V iso
Item
Junction temperature
Storage temperature
Module case operating temperature
Isolation voltage
Mounting torque
Condition
(Note 2)
(Fig. 3)
60 Hz sinusoidal AC applied between all terminals and
the base plate for 1 minute.
Mounting screw: M4.0
Ratings
–20 ~ +125
–40 ~ +125
–20 ~ +100
2500
0.98 ~ 1.47
Unit
° C
° C
° C
Vrms
N·m
Note 2) The item defines the maximum junction temperature for the power elements (IGBT/Diode) of the ASIPM to ensure safe operation. How-
ever, these power elements can endure instantaneous junction temperature as high as 150 ° C instantaneously . To make use of this ad-
ditional temperature allowance, a detailed study of the exact application conditions is required and, accordingly, necessary information
is requested to be provided before use.
CASE TEMPERATURE MEASUREMENT POINT (3mm from the base surface)
LABEL
Tc
(Fig. 3)
THERMAL RESISTANCE
Symbol
Rth(j-c) Q
Rth(j-c) F
Rth(j-c) Q
Rth(j-c) F
Rth(c-f)
Item
Junction to case Thermal
Resistance
Contact Thermal Resistance
Condition
Inverter IGBT (1/6)
Inverter FWDi (1/6)
Brake IGBT
Brake FWDi
Case to fin, thermal grease applied
Min.
Ratings
Typ.
Max.
1.75
2.4
2.9
4.5
0.031
Unit
° C/W
° C/W
° C/W
° C/W
° C/W
ELECTRICAL CHARACTERISTICS (Tj = 25 ° C, V DH = 15V, V DB = 15V unless otherwise noted)
Symbol
V CE(sat)
V EC
V CE(sat)Br
V FBr
ton
tc(on)
toff
tc(off)
trr
Item
Collector-emitter saturation voltage
FWDi forward voltage
Brake IGBT
Collector-emitter saturation voltage
Brake diode forward voltage
Switching times
FWD reverse recovery time
Condition
V DH = V DB = 15V, Input = ON, Tj = 25 ° C, Ic = 50A
Tj = 25 ° C, Ic = –50A, Input = OFF
V DH = 15V, Input = ON, Tj = 25 ° C, Ic = 15A
Tj = 25 ° C, I F = 15A, Input = OFF
1/2 Bridge inductive, Input = ON
V CC = 300V, Ic = 50A, Tj = 125 ° C
V DH = 15V, V DB = 15V
Note : ton, toff include delay time of the internal control
circuit
Min.
0.40
Ratings
Typ.
0.8
0.40
1.5
0.6
0.15
Max.
2.9
2.9
3.5
2.9
2.0
1.0
2.4
1.3
Unit
V
V
V
V
μ s
μ s
μ s
μ s
μ s
Short circuit endurance
(Output, Arm, and Load,
Short Circuit Modes)
Switching SOA
V CC ≤ 400V, Input = ON (one-shot)
Tj = 125 ° C start
13.5V ≤ V DH = V DB ≤ 16.5V
V CC ≤ 400V, Tj ≤ 125 ° C,
Ic < I OL (CL) operation level, Input = ON,
13.5V ≤ V DH = V DB ≤ 16.5V
? No destruction
? F O output by protection operation
? No destruction
? No protecting operation
? No F O output
I DH
V th(on)
V th(off)
R i
Circuit current
Input on threshold voltage
Input off threshold voltage
Input pull-up resister
V DH = 15V, V CIN = 5V
Integrated between input terminal-V DH
0.8
2.5
1.4
3.0
150
150
2.0
4.0
mA
V
V
k ?
May 200 1
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