参数资料
型号: PS12013-A
厂商: Powerex Inc
文件页数: 2/6页
文件大小: 0K
描述: MOD IPM 3PHASE IGBT 1200V 5A
标准包装: 2
类型: IGBT
配置: 三相反相器
电流: 5A
电压: 1200V
电压 - 隔离: 2500Vrms
封装/外壳: 36-DIP 模块
MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module>
PS12013-A
FLAT-BASE TYPE
INSULATED TYPE
INTERNAL FUNCTIONS BLOCK DIAGRAM
Application Specific Intelligent
Power Module
Protection
Circuit
Input Circuit
Drive Circuit
P
Brake resistor connection,
Inrush prevention circuit,
etc.
B
AC 400V class line input
R
U
S
T
V
W
M
Z : Surge absorber.
Z
C
N
Current sensing
T
S
AC 400V class
line output
C : AC filter (Ceramic condenser 2.2~6.5nF)
[Note : Additionally an appropriate Line-to line
circuit
Drive Circuit
surge absorber circuit may become necessary
depending on the application environment].
Input signal conditioning
Fo Logic
Protection
circuit
Control supply
fault sense
CU CV CW U P V P W P U N V N W N B r
Analogue signal output corresponding to PWM input
each phase current (5V line) Note 1)
(5V line) Note 2)
CL,FO 1 ,FO 2 ,FO 3
Fault output
(5V line) Note 3)
GND
VDL VDH
Note 1) To prevent chances of signal oscillation, a series resistor (1k ? ) coupling at each output is recommended.
Note 2) By virtue of integrating a photo-coupler inside the module, direct coupling to CPU, without any extemal opto or transformer isolation is possible.
Note 3) All outputs are open collector type. Each signal line should be pulled up to plus side of the 5V power supply with approximately 5.1k ? resistance.
Note 4) The wiring between power DC link capacitor and P/N terminals should be as short as possible to protect the ASIPM against catastrophic high surge voltage.
For extra precaution, a small film snubber capacitor (0.1~0.22 μ F, high voltage type) is recommended to be mounted close to these P and N DC power input pins.
(Fig. 2)
MAXIMUM RATINGS (Tj = 25 ° C)
INVERTER PART (Including Brake Part)
Symbol
V CC
V CC(surge)
Item
Supply voltage
Supply voltage (surge)
Condition
Applied between P-N
Applied between P-N, Surge-value
Ratings
900
1000
Unit
V
V
V P or V N
V P(S) or
V N(S)
Each output IGBT collector-emitter static voltage Applied between P-U, V, W, Br or U, V, W, Br-N
Each output IGBT collector-emitter surge voltage Applied between P-U, V, W, Br or U, V, W, Br-N
1200
1200
V
V
± Ic( ± Icp)
Ic(Icp)
Each output IGBT collector current
Brake IGBT collector current
T C = 25 ° C
± 5 ( ± 10)
5 (10)
A
A
I F (I FP )
Brake diode anode current
Note : “(
)” means I C peak value
5 (10)
A
CONTROL PART
Symbol
V DH , V DB
V DL
V CIN
V FO
I FO
V CL
I CL
I CO
Item
Supply voltage
Supply voltage
Input signal voltage
Fault output supply voltage
Fault output current
Current-limit warning output voltage
CL output current
Analogue-current-signal output current
Condition
Applied between V DH -GND, C BU+ -C BU– ,
C BV+ -C BV– , C BW+ -C BW–
Applied between V DL -GND
Applied between U P · V P · W P · U N · V N ·
W N · B r -GND
Applied between F O1 · F O2 · F O3 -GND
Sink current of F O1 · F O2 · F O3
Applied between CL-GND
Sink current of CL
Sink current of CU · CV · CW
Ratings
20
7
–0.5 ~ V DL +0.5
–0.5 ~ 7
15
–0.5 ~ 7
15
± 1
Unit
V
V
V
V
mA
V
mA
mA
Jan. 2000
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