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参数资料
| 型号： | PS12014-A |
| 厂商： | Powerex Inc |
| 文件页数： | 4/6页 |
| 文件大小： | 0K |
| 描述： | MOD IPM 3PHASE IGBT 1200V 10A |
| 标准包装： | 2 |
| 类型： | IGBT |
| 配置： | 三相反相器 |
| 电流： | 10A |
| 电压： | 1200V |
| 电压 - 隔离： | 2500Vrms |
| 封装/外壳： | 36-DIP 模块 |
MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module>
PS12014-A
FLAT-BASE TYPE
INSULATED TYPE
ELECTRICAL CHARACTERISTICS (Tj = 25 ° C, V DH = 15V, V DB = 15V, V DL = 5V unless otherwise noted)
Symbol
f PWM
t xx
t dead
t int
Item
PWM input frequency
Allowable input on-pulse width
Allowable input signal dead time
for blocking arm shoot-through
Input inter-lock sensing
Condition
T C ≤ 100 ° C, Tj ≤ 125 ° C
V DH = 15V, V DL = 5V, T C = –20 ° C ~ +100 ° C Note 3)
Relates to corresponding inputs (Except brake part)
T C = –20 ° C ~ +100 ° C
Relates to corresponding inputs (Except brake part)
Min.
2
2
4.0
—
Ratings
Typ.
—
—
—
65
Max.
15
500
—
100
Unit
kHz
μ s
μ s
ns
V CO
Ic = 0A
V DH = 15V
1.87
2.27
2.57
V
V C+(200%)
V C–(200%)
Analogue signal linearity with
output current
Ic = I OP(200%)
Ic = –I OP(200%)
V DL = 5V
T C = –20 ~ 100 ° C
(Fig.4)
0.77
2.97
1.17
3.37
1.47
3.67
V
V
| ? V CO |
Offset change area vs temperature V DH = 15V, V DL = 5V, T C = –20 ~ 100 ° C
—
15
—
mV
V C+
V C–
Analogue signal output voltage limit
Ic > I OP(200%) , V DH = 15V,
V DL = 5V
(Fig. 4)
—
4.0
—
—
0.7
—
V
V
? V C (200%)
r CH
Analogue signal overall linear
variation
Analogue signal data hold
accuracy
|V CO -V C ± (200%) |
Correspond to max. 500 μ s data hold period only,
Ic = I OP(200%) (Fig. 5)
—
–5
1.1
—
—
5
V
%
t d(read)
Analogue signal reading time
After input signal trigger point
(Fig. 8)
—
3
—
μ s
I CL(H)
I CL(L)
Signal output cur-
rent of CL operation
Idle
Active
Open collector onput
—
—
—
1
1
—
μ A
mA
± I OL
CL warning operation level
V DL = 5V, V DH = 15V, T C = –20 ~ 100 ° C
(Note 4)
9.14
11.05
13.90
A
SC
Short circuit current trip level
Tj = 25 ° C
(Fig. 7), (Note 5)
15.30
26.80
38.90
A
OT
OTr
UV DB
UV DBr
UV DH
UV DHr
OV DH
OV DHr
t dv
Over tenperature
protection
Supply circuit
under and
over voltage
protection
Trip level
Reset level
Trip level
Reset level
Trip level
Reset level
Trip level
Reset level
Filter time
V DL = 5V, V DH = 15V
T C = –20 ° C ~ +100 ° C
Tj ≤ 125 ° C
100
—
10.0
10.5
11.05
11.55
18.00
16.50
—
110
90
11.0
11.5
12.00
12.50
19.20
17.50
10
120
—
12.0
12.5
12.75
13.25
20.15
18.65
—
° C
° C
V
V
V
V
V
V
μ s
I FO(H)
I FO(L)
Fault output current
Idle
Active
Open collector output
—
—
—
1
1
—
μ A
mA
(Note 3) : (a) Allowable minimum input on-pulse width : This item applies to P-side circuit only.
(b) Allowable maximum input on-pulse width : This item applies to both P-side and N-side circuits excluding the brake circuit.
(Note4) : CL output : The "current limit warning (CL) operation circuit outputs warning signal whenever the arm current exceeds this limit. The
circuit is reset automatically by the next input signal and thus, it operates on a pulse-by-pulse scheme.
(Note5) : The short circuit protection works instantaneously when a high short circuit current flows through an internal IGBT rising up momen-
tarily. The protection function is, thus meant primarily to protect the ASIPM against short circuit distraction. Therefore, this function is
not recommended to be used for any system load current regulation or any over load control as this might, cause a failure due to
excessive temperature rise. Instead, the analogue current output feature or the over load warning feature (CL) should be appropri-
ately used for such current regulation or over load control operation. In other words, the PWM signals to the ASIPM should be shut
down, in principle, and not to be restarted before the junction temperature would recover to normal, as soon as a fault is feed back
from its F O1 pin of the ASIPM indicating a short circuit situation.
RECOMMENDED CONDITIONS
Symbol
V CC
V DH , V DB
V DL
? V DH , ? V DB ,
? V DL
V CIN(on)
V CIN(off)
f PWM
t dead
Item
Supply voltage
Control supply voltage
Control supply voltage
Supply voltage ripple
Input ON voltage
Input OFF voltage
PWM Input frequency
Arm shoot-through blocking time
Condition
Applied between P-N
Applied between V DH -GND, C BU+ -C BU– , C BV+ -C BV– ,
C BW+ -C BW–
Applied between V DL -GND
Using application circuit
Using application circuit
Min.
—
13.5
4.8
–1
—
4.8
2
4.0
Ratings
Typ.
600
15.0
5.0
—
—
—
10
—
Max.
800
16.5
5.2
+1
0.3
—
15
—
Unit
V
V
V
V/ μ s
V
V
kHz
μ s
Jan. 2000
相关PDF资料 |
PDF描述 |
|---|---|
| PS12015-A | MOD IPM 3PHASE IGBT 1200V 15A |
| PS12017-A | MOD IPM 3PHASE IGBT 1200V 25A |
| PS12018-A | MOD IPM 3PHASE IGBT 1200V 25A |
| PS12032 | MOD IPM 3PHASE IGBT 1200V 5A |
| PS12033 | MOD IPM 3PHASE IGBT 1200V 5A |
相关代理商/技术参数 |
参数描述 |
|---|---|
| PS12015 | 制造商:POWEREX 制造商全称:Powerex Power Semiconductors 功能描述:FLAT-BASE TYPE INSULATED TYPE |
| PS120-15 | 制造商:Banner Engineering 功能描述:Power Supply, 120VAC Input, 15VDC @ 1 Amp Output, 8 Pin Octal Socket Connection |
| PS12015-A | 功能描述:MOD IPM 3PHASE IGBT 1200V 15A RoHS:否 类别:半导体模块 >> 功率驱动器 系列:- 标准包装:15 系列:SPM® 类型:FET 配置:三相反相器 电流:1.8A 电压:500V 电压 - 隔离:1500Vrms 封装/外壳:23-DIP 模块 |
| PS12017-A | 功能描述:MOD IPM 3PHASE IGBT 1200V 25A RoHS:否 类别:半导体模块 >> 功率驱动器 系列:- 标准包装:15 系列:SPM® 类型:FET 配置:三相反相器 电流:1.8A 电压:500V 电压 - 隔离:1500Vrms 封装/外壳:23-DIP 模块 |
| PS12018-A | 功能描述:MOD IPM 3PHASE IGBT 1200V 25A RoHS:否 类别:半导体模块 >> 功率驱动器 系列:- 标准包装:15 系列:SPM® 类型:FET 配置:三相反相器 电流:1.8A 电压:500V 电压 - 隔离:1500Vrms 封装/外壳:23-DIP 模块 |
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