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参数资料
| 型号： | PS12018-A |
| 厂商： | Powerex Inc |
| 文件页数： | 3/6页 |
| 文件大小： | 0K |
| 描述： | MOD IPM 3PHASE IGBT 1200V 25A |
| 标准包装： | 2 |
| 类型： | IGBT |
| 配置： | 三相反相器 |
| 电流： | 25A |
| 电压： | 1200V |
| 电压 - 隔离： | 2500Vrms |
| 封装/外壳： | 36-DIP 模块 |
MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module>
INA
ELIM
ation
PR
not a its are su
Notic e parame
e: Th is is tr ic lim
Som
TOTAL SYSTEM
RY
.
b
final s pecific ject to cha
nge.
PS12018-A
FLAT-BASE TYPE
INSULATED TYPE
Symbol
T j
T stg
T C
V ISO
—
Item
Junction temperature
Storage temperature
Module case operating temperature
Isolation voltage
Mounting torque
Condition
(Note 2)
—
(Fig. 3)
60 Hz sinusoidal AC for 1 minute, between all terminals
and base plate.
Mounting screw: M4.0
Ratings
–20 ~ +125
–40 ~ +125
–20 ~ +100
2500
0.98 ~ 1.47
Unit
° C
° C
° C
Vrms
N·m
Note 2) : The item defines the maximum junction temperature for the power elements (IGBT/Diode) of the ASIPM to ensure safe operation.
However, these power elements can endure instantaneous junction temperature as high as 150 ° C. To make use of this additional
temperature allowance, a detailed study of the exact application conditions is required and, accordingly, necessary information is
to be provided before use.
CASE TEMPERATURE MEASUREMENT POINT (3mm from the base surface)
LABEL
Tc
(Fig. 3)
THERMAL RESISTANCE
Symbol
R th(jc ) Q
R th(jc)F
R th(jc ) QB
R th(jc)FB
R th(c-f)
Item
Junction to case Thermal
Resistance
Contact Thermal Resistance
Condition
Inverter IGBT (1/6)
Inverter FWDi (1/6)
Brake IGBT
Brake FWDi
Case to fin, thermal grease applied (1 Module)
Min.
—
—
—
—
—
Ratings
Typ.
—
—
—
—
—
Max.
1.6
3.0
2.9
5.5
0.031
Unit
° C/W
° C/W
° C/W
° C/W
° C/W
ELECTRICAL CHARACTERISTICS (Tj = 25 ° C, V DH = 15V , V DB = 15V, V DL = 5V unless otherwise noted)
Symbol
V CE(sat)
V EC
V CE(sat)Br
V FBr
ton
tc(on)
toff
tc(off)
trr
Item
Collector-emitter saturation
voltage
FWDi forward voltage
Brake IGBT
Collector-emitter saturation voltage
Brake diode forward voltage
Switching times
FWD reverse recovery time
Condition
V DL = 5V, V DH = V DB = 15V Input = ON,
Tj = 25 ° C, Ic = 25A
Tj = 25 ° C, Ic = –25A, Input = OFF
V DL = 5V, V DH = 15V Input = ON, Tj = 25 ° C, Ic = 10A
Tj = 25 ° C, I F = 10A, Input = OFF
1/2 Bridge inductive, Input = ON
V CC = 600V, Ic = 25A, Tj = 125 ° C
V DL = 5V, V DH = 15V, V DB = 15V
Note : ton, toff include delay time of the internal control
circuit.
Min.
—
—
—
—
0.40
—
—
—
—
Ratings
Typ.
—
—
—
—
1.4
0.60
2.2
0.9
0.2
Max.
3.6
3.5
3.6
3.5
2.5
1.5
4.0
1.6
—
Unit
V
V
V
V
μ s
μ s
μ s
μ s
μ s
13.5V ≤ V DH = V DB = ≤ 16.5V, V DL = 5V
Short circuit endurance V CC ≤ 800V, Input = ON (One-Shot)
(Output, Arm, and Load, Short Tj = 125 ° C start
Circuit Modes)
V CC ≤ 800V, Tj ≤ 125 ° C,
? No destruction
? F O output by protection operation
? No destruction
Switching SOA
Ic < I OL (CL) operation level, Input = ON,
13.5V ≤ V DH = V DB = ≤ 16.5V, V DL = 5V
? No protecting operation
? No F O output
I DH
I DL
V th(on)
V th(off)
R i
V DH Circuit Current
V DL Circuit Current
Input on threshold voltage
Input off threshold voltage
Input pull-up resistor
V DL = 5V, V DH = 15V, V CIN = 5V
V DL = 5V, V DH = 15V, V CIN = 5V
Integrated between input terminal-V DH
—
—
0.8
2.5
—
—
—
1.4
3.0
150
150
50
2.0
4.0
—
mA
mA
V
V
k ?
Jan. 2000
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