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参数资料
| 型号： | PS21962-AT |
| 元件分类： | 运动控制电子 |
| 英文描述： | AC MOTOR CONTROLLER, 10 A, DMA25 |
| 封装： | DIP-25 |
| 文件页数： | 6/10页 |
| 文件大小： | 178K |
| 代理商： | PS21962-AT |
MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21962-T/-AT/-CT/-TW
TRANSFER-MOLD TYPE
INSULATED TYPE
Mar. 2009
5
2.20
2.30
2.20
1.60
—
0.50
2.00
0.80
1
10
4.7
5.4
mA
V
Tj = 25
°C
Tj = 125
°C
IC = 5A, Tj = 25
°C
IC = 5A, Tj = 125
°C
VCE(sat)
VEC
ton
trr
tc(on)
toff
tc(off)
ICES
Condition
Symbol
Parameter
Limits
Inverter IGBT part (per 1/6 module)
Inverter FWD part (per 1/6 module)
Rth(j-c)Q
Rth(j-c)F
Min.
THERMAL RESISTANCE
Typ.
Max.
—
Unit
Tj = 25
°C, –IC = 5A, VIN = 0V
Condition
Symbol
Parameter
Limits
Min.
Typ.
Max.
—
0.50
—
Unit
ELECTRICAL CHARACTERISTICS (Tj = 25
°C, unless otherwise noted)
INVERTER PART
Collector-emitter saturation
voltage
FWD forward voltage
Junction to case thermal
resistance
(Note 3)
VD = VDB = 15V
VIN = 5V
Switching times
VCC = 300V, VD = VDB = 15V
IC = 5A, Tj = 125
°C, VIN = 0 5V
Inductive load (upper-lower arm)
Collector-emitter cut-off
current
VCE = VCES
1.70
1.80
1.70
1.00
0.30
1.40
0.50
—
V
s
°C/W
Note 3 : Grease with good thermal conductivity should be applied evenly with about +100
m~+200m on the contacting surface of DIPIPM and
heat-sink.
The contacting thermal resistance between DIPIPM case and heat sink (Rth(c-f)) is determined by the thickness and the thermal
con-
ductivity of the applied grease. For reference, Rth(c-f) (per 1/6 module) is about 0.3
°C/W when the grease thickness is 20m and
the thermal conductivity is 1.0W/mk.
Note 2: TC measurement point
IGBT chip position
Power terminals
FWD chip position
Control terminals
TC point
Heat sink side
11.6mm
3mm
400
–20~+100
–40~+125
1500
VD = 13.5~16.5V, Inverter part
Tj = 125
°C, non-repetitive, less than 2s
(Note 2)
60Hz, Sinusoidal, 1 minute,
Between pins and heat-sink plate
VCC(PROT)
TC
Tstg
Viso
Symbol
Ratings
Unit
Self protection supply voltage limit
(short circuit protection capability)
Module case operation temperature
Storage temperature
Isolation voltage
V
°C
Vrms
TOTAL SYSTEM
Parameter
Condition
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相关代理商/技术参数 |
参数描述 |
|---|---|
| PS21962-C | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:600V/5A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion |
| PS21962-CT | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:600V/5A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion |
| PS21962-S | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:600V/5A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion |
| PS21962-ST | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:600V/5A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion |
| PS21962-ST_09 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:600V/5A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion. |
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