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参数资料
| 型号： | PS21963-4E |
| 厂商： | Powerex Inc |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOD IPM 600V 8A SUPERMINIDIP |
| 标准包装： | 9 |
| 系列： | Intellimod™ |
| 类型： | IGBT |
| 配置： | 3 相 |
| 电流： | 8A |
| 电压： | 600V |
| 电压 - 隔离： | 1500VDC |
| 封装/外壳： | PCB 模块 |
| 配用： | 835-1029-ND - KIT DEV INTERFACE IPM MINIDIP |
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
PS21963-4E, PS21963-4AE, PS21963-4CE
Intellimod? Module
Dual-In-Line Intelligent Power Module
8 Amperes/600 Volts
Absolute Maximum Ratings, T j = 25°C unless otherwise specified
PS21963-4E, PS21963-4AE
Characteristics
Power Device Junction Temperature*
Storage Temperature
Case Operating Temperature (Note 1)
Mounting Torque, M3 Mounting Screws
Module Weight (Typical)
Heatsink Flatness (Note 2)
Self-protection Supply Voltage Limit (Short Circuit Protection Capability)**
Isolation Voltage, AC 1 minute, 60Hz Sinusoidal, Connection Pins to Heatsink Plate
Symbol
T j
T stg
T C
—
—
—
V CC(prot.)
V ISO
PS21963-4CE
-20 to 150
-40 to 125
-20 to 100
6.9
10
-50 to 100
400
1500
Units
°C
°C
°C
in-lb
Grams
μm
Volts
Volts
*The ma ximum junction temperature rating of the power chips integrated within the DIP-IPM is 150°C (@T C ≤ 100°C). However, to ensure safe operation of the DIP-IPM,
the average junction temperature should be limited to T j(avg) ≤ 125°C (@T C ≤ 100°C).
**V D = 13.5 ~ 16.5V, Inverter Part, T j = 125°C, Non-repetitive, Less than 2μs
IGBT Inverter Sector
Collector-Emitter Voltage
Each Collector Current, ± (T C = 25°C)
Each Peak Collector Current, ± (T C = 25°C, Less than 1ms)
Supply Voltage (Applied between P - N)
Supply Voltage, Surge (Applied between P - N)
Collector Dissipation (T C = 25°C, per 1 Chip)
V CES
I C
I CP
V CC
V CC(surge)
P C
600
8
16
450
500
24.3
Volts
Amperes
Amperes
Volts
Volts
Watts
Control Sector
Supply Voltage (Applied between V P1 -V NC , V N1 -V NC )
Supply Voltage (Applied between V UFB -U, V VFB -V, V WFB -W)
Input Voltage (Applied between U P , V P , W P -V NC , U N , V N , W N -V NC )
Fault Output Supply Voltage (Applied between F O -V NC )
Fault Output Current (Sink Current at F O Terminal)
Current Sensing Input Voltage (Applied between C IN -V NC )
V D
V DB
V IN
V FO
I FO
V SC
20
20
-0.5 ~ V D +0.5
-0.5 ~ V D +0.5
1
-0.5 ~ V D +0.5
Volts
Volts
Volts
Volts
mA
Volts
Note 1 – T C Measure Point
CONTROL TERMINALS
DIP-IPM
Note 2 – Flatness Measurement Position
MEASUREMENT POINT
IGBT
CHIP
FWDi
CHIP
11.6mm
3.0mm
TC POINT
HEATSINK SIDE
+ –
HEATSINK
4.6mm
PLACE TO CONTACT
A HEATSINK
2
POWER TERMINALS
–
+
HEATSINK
Rev. 12/09
相关PDF资料 |
PDF描述 |
|---|---|
| PS21963-4S | MOD IPM 600V 10A SUPERMINIDIP |
| PS21963-4 | MOD IPM 600V 10A SUPERMINIDIP |
| PS21964-4A | MOD IPM 600V 15A SUPER MINI DIP |
| PS21964-4S | MOD IPM 600V 15A SUPER MINI DIP |
| PS21965-4A | MOD IPM 600V 20A SUPRMINIDIP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| PS21963-4E_09 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:Dual-In-Line Package Intelligent Power Module |
| PS21963-4ES | 功能描述:MOD IPM 600V 8A SUPERMINIDIP RoHS:是 类别:半导体模块 >> 功率驱动器 系列:Intellimod™ 标准包装:15 系列:SPM® 类型:FET 配置:三相反相器 电流:1.8A 电压:500V 电压 - 隔离:1500Vrms 封装/外壳:23-DIP 模块 |
| PS21963-4ES_09 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:Dual-In-Line Package Intelligent Power Module |
| PS21963-4EW | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:Dual-In-Line Package Intelligent Power Module |
| PS21963-4S | 功能描述:MOD IPM 600V 10A SUPERMINIDIP RoHS:是 类别:半导体模块 >> 功率驱动器 系列:Intellimod™ 标准包装:15 系列:SPM® 类型:FET 配置:三相反相器 电流:1.8A 电压:500V 电压 - 隔离:1500Vrms 封装/外壳:23-DIP 模块 |
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