参数资料
型号: PS21963-CET
元件分类: 运动控制电子
英文描述: AC MOTOR CONTROLLER, 16 A, DMA24
封装: DIP-25/24
文件页数: 2/10页
文件大小: 178K
代理商: PS21963-CET
MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21963-ET/-AET/-CET/-ETW
TRANSFER-MOLD TYPE
INSULATED TYPE
Mar. 2009
10
Fig. 11 AN EXAMPLE OF TYPICAL DIPIPM APPLICATION CIRCUIT
15V line
WOUT
VOUT
C3
C2
C1
UOUT
WP
VWB
VP
VVB
5V line
UP
COM
UOUT
VOUT
WOUT
GND
F
o
WN
VN
VCC
C
B
A
R1
N1
C4
CIN
N
W
V
U
P
VWS
VVS
VUS
VUB
VCC
Fo
WN
VN
UN
UN
WP
VP
UP
VNC
VN1
VP1
VUFB
VVFB
VWFB
C3
MCU
HVIC
LVIC
Shunt
resistor
Long wiring here might cause SC
level fluctuation and malfunction.
C1: Electrolytic capacitor with good temperature characteristics
0.22~2
F R-category ceramic capacitor for noise filtering
C2,C3:
Long GND wiring here might
generate noise to input and
cause IGBT malfunction.
Long wiring here might
cause short-circuit.
Long wiring here might
cause short-circuit.
M
Bootstrap negative
electrodes should be
connected to U, V, W
terminals directly and
separated from the
main output wires.
Note 1 : Input drive is High-Active type. There is a 3.3k
(min.) pull-down resistor integrated in the IC input circuit. To prevent malfunction, the
wiring of each input should be as short as possible. When using RC coupling circuit, make sure the input signal level meet the turn-on
and turn-off threshold voltage.
2: Thanks to HVIC inside the module, direct coupling to MCU without any opto-coupler or transformer isolation is possible.
3: FO output is open drain type. It should be pulled up to the positive side of a 5V power supply by a resistor of about 10k
.
4: To prevent erroneous protection, the wiring of A, B, C should be as short as possible.
5: The time constant R1C4 of the protection circuit should be selected in the range of 1.5-2
s. SC interrupting time might vary with the
wiring pattern. Tight tolerance, temp-compensated type is recommended for R1, C4.
6: All capacitors should be mounted as close to the terminals of the DIPIPM as possible. (C1: good temperature, frequency character-
istic electrolytic type, and C2, C3: good temperature, frequency and DC bias characteristic ceramic type are recommended.)
7: To prevent surge destruction, the wiring between the smoothing capacitor and the P, N1 terminals should be as short as possible.
Generally a 0.1-0.22
F snubber between the P-N1 terminals is recommended.
8: Two VNC terminals (9 & 16 pin) are connected inside DIPIPM, please connect either one to the 15V power supply GND outside and
leave another one open.
9: It is recommended to insert a Zener diode (24V/1W) between each pair of control supply terminals to prevent surge destruction.
10 : If control GND is connected to power GND by broad pattern, it may cause malfunction by power GND fluctuation. It is recommended
to connect control GND and power GND at only a point.
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相关代理商/技术参数
参数描述
PS21963-CT 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:Dual-In-Line Package Intelligent Power Module TRANSFER-MOLD TYPE INSULATED TYPE
PS21963-EST 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:Dual-In-Line Package Intelligent Power Module TRANSFER-MOLD TYPE INSULATED TYPE
PS21963-EST_09 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:Dual-In-Line Package Intelligent Power Module TRANSFER-MOLD TYPE INSULATED TYPE
PS21963-ET 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:Dual-In-Line Package Intelligent Power Module TRANSFER-MOLD TYPE INSULATED TYPE
PS21963-ET_09 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:Dual-In-Line Package Intelligent Power Module TRANSFER-MOLD TYPE INSULATED TYPE