参数资料
型号: PSD835G1V-A-70M
厂商: 意法半导体
英文描述: Configurable Memory System on a Chip for 8-Bit Microcontrollers
中文描述: 在8片位微控制器可配置存储系统
文件页数: 12/110页
文件大小: 570K
代理商: PSD835G1V-A-70M
PSD835G2
PSD8XX Family
11
Table 6 shows the offset addresses to the PSD835G2 registers relative to the CSIOP base
address. The CSIOP space is the 256 bytes of address that is allocated by the user to the
internal PSD835G2 registers. Table 6 provides brief descriptions of the registers in CSIOP
space. For a more detailed description, refer to section 9.
7.0 PSD835G2
Register
Description and
Address Offset
Register Name
Port A
Port B
Port C
Port D
Port E
Port F
Port G
Other*
Description
Data In
00
01
10
11
30
40
41
Reads Port pin as input,
MCU I/O input mode
Selects mode between
MCU I/O or Address Out
Stores data for output
to Port pins, MCU I/O
output mode
Configures Port pin as
input or output
Configures Port pins as
either CMOS or Open
Drain on some pins, while
selecting high slew rate
on other pins.
Reads Input Micro
Cells
Reads the status of the
output enable to the I/O
Port driver
Read – reads output of
Micro
Cells A
Write – loads Micro
cell
Flip-Flops
Read – reads output of
Micro
Cells B
Write – loads Micro
cell
Flip-Flops
Blocks writing to the
Output Micro
Cells A
Blocks writing to the
Output Micro
Cells B
Read only – Flash Sector
Protection
Read only – PSD Security
and Flash Boot Sector
Protection
Enables JTAG Port
Power Management
Register 0
Power Management
Register 2
Page Register
Places PSD memory
areas in Program and/or
Data space on an
individual basis.
Read only – Flash and
SRAM size
Read only – Boot type
and size
Control
32
42
43
Data Out
04
05
14
15
34
44
45
Direction
06
07
16
17
36
46
47
Drive Select
08
09
18
19
38
48
49
Input Micro
Cell
0A
0B
1A
Enable Out
0C
0D
1C
4C
Output
Micro
Cells A
20
Output
Micro
Cells B
21
Mask
Micro
Cells A
Mask
Micro
Cells B
22
23
Flash Protection
C0
Flash Boot
Protection
C2
JTAG Enable
C7
PMMR0
B0
PMMR2
B4
Page
E0
VM
E2
Memory_ID0
F0
Memory_ID1
F1
Table 6. Register Address Offset
相关PDF资料
PDF描述
PSD835G3V-A-90B81 Configurable Memory System on a Chip for 8-Bit Microcontrollers
PSD835G3V-A-90B81I Configurable Memory System on a Chip for 8-Bit Microcontrollers
PSD835G3V-A-90J Configurable Memory System on a Chip for 8-Bit Microcontrollers
PSD835G3V-A-90JI Configurable Memory System on a Chip for 8-Bit Microcontrollers
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相关代理商/技术参数
参数描述
PSD835G2-70U 功能描述:静态随机存取存储器 5.0V 4M 70ns RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray
PSD835G2-90U 功能描述:静态随机存取存储器 5.0V 4M 90ns RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray
PSD835G2-90UI 功能描述:静态随机存取存储器 5.0V 4M 90ns RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray
PSD835G2V-12UI 功能描述:静态随机存取存储器 3.0V 4M 120ns RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray
PSD835G2V-90U 功能描述:静态随机存取存储器 3.0V 4M 90ns RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray