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参数资料
| 型号： | PSD835G3V-A-90B81 |
| 厂商： | 意法半导体 |
| 英文描述： | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| 中文描述： | 在8片位微控制器可配置存储系统 |
| 文件页数： | 17/110页 |
| 文件大小： | 570K |
| 代理商： | PSD835G3V-A-90B81 |
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PSD8XX Family
PSD835G2
16
9.0
The
PSD835G2
Functional
Blocks
As shown in Figure 1, the PSD835G2 consists of six major types of functional blocks:
J
Memory Blocks
J
PLD Blocks
J
Bus Interface
J
I/OPorts
J
Power Management Unit
J
JTAG-ISP Interface
The functions of each block are described in the following sections. Many of the blocks
perform multiple functions, and are user configurable.
9.1 Memory Blocks
The PSD835G2 has the following memory blocks:
The main Flash memory
Secondary Flash memory
SRAM.
The memory select signals for these blocks originate from the Decode PLD (DPLD) and
are user-defined in PSDsoft.
Table 7 summarizes which versions of the PSD835G2 contain which memory blocks.
Main Flash
Secondary Flash
Block Size
Device
Flash Size
Sector Size
Sector Size
SRAM
PSD835G2
512KB
64KB
32KB
8KB
8KB
Table 7. Memory Blocks
9.1.1 Main Flash and Secondary Flash Memory Description
The main Flash memory block is divided evenly into eight sectors. The secondary Flash
memory is divided into four sectors of eight Kbytes each. Each sector of either memory
can be separately protected from program and erase operations.
Flash memory may be erased on a sector-by-sector basis and programmed word-by-word.
Flash sector erasure may be suspended while data is read from other sectors of memory
and then resumed after reading.
During a program or erase of Flash, the status can be output on the Rdy/Bsy pin of Port
PE4. This pin is set up using PSDsoft.
9.1.1.1 Memory Block Selects
The decode PLD in the PSD835G2 generates the chip selects for all the internal memory
blocks (refer to the PLD section). Each of the eight Flash memory sectors have a
Flash Select signal (FS0-FS7) which can contain up to three product terms. Each of the
four Secondary Flash memory sectors have a Select signal (CSBOOT0-3) which can
contain up to three product terms. Having three product terms for each sector select signal
allows a given sector to be mapped in different areas of system memory. When using a
microcontroller (80C51) with separate Program and Data space, these flexible select
signals allow dynamic re-mapping of sectors from one space to the other before and after
IAP.
相关PDF资料 |
PDF描述 |
|---|---|
| PSD835G3V-A-90B81I | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| PSD835G3V-A-90J | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| PSD835G3V-A-90JI | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| PSD835G3V-A-90M | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| PSD835G3V-B-20J | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
相关代理商/技术参数 |
参数描述 |
|---|---|
| PSD853F2-70J | 功能描述:SPLD - 简单可编程逻辑器件 5.0V 1M 70ns RoHS:否 制造商:Texas Instruments 逻辑系列:TICPAL22V10Z 大电池数量:10 最大工作频率:66 MHz 延迟时间:25 ns 工作电源电压:4.75 V to 5.25 V 电源电流:100 uA 最大工作温度:+ 75 C 最小工作温度:0 C 安装风格:Through Hole 封装 / 箱体:DIP-24 |
| PSD853F2-70M | 功能描述:CPLD - 复杂可编程逻辑器件 5.0V 1M 70ns RoHS:否 制造商:Lattice 系列: 存储类型:EEPROM 大电池数量:128 最大工作频率:333 MHz 延迟时间:2.7 ns 可编程输入/输出端数量:64 工作电源电压:3.3 V 最大工作温度:+ 90 C 最小工作温度:0 C 封装 / 箱体:TQFP-100 |
| PSD853F2-90J | 功能描述:CPLD - 复杂可编程逻辑器件 5.0V 1M 90ns RoHS:否 制造商:Lattice 系列: 存储类型:EEPROM 大电池数量:128 最大工作频率:333 MHz 延迟时间:2.7 ns 可编程输入/输出端数量:64 工作电源电压:3.3 V 最大工作温度:+ 90 C 最小工作温度:0 C 封装 / 箱体:TQFP-100 |
| PSD853F2-90JI | 功能描述:CPLD - 复杂可编程逻辑器件 5.0V 1M 90ns RoHS:否 制造商:Lattice 系列: 存储类型:EEPROM 大电池数量:128 最大工作频率:333 MHz 延迟时间:2.7 ns 可编程输入/输出端数量:64 工作电源电压:3.3 V 最大工作温度:+ 90 C 最小工作温度:0 C 封装 / 箱体:TQFP-100 |
| PSD853F2-90M | 功能描述:CPLD - 复杂可编程逻辑器件 5.0V 1M 90ns RoHS:否 制造商:Lattice 系列: 存储类型:EEPROM 大电池数量:128 最大工作频率:333 MHz 延迟时间:2.7 ns 可编程输入/输出端数量:64 工作电源电压:3.3 V 最大工作温度:+ 90 C 最小工作温度:0 C 封装 / 箱体:TQFP-100 |
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