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参数资料
| 型号： | PSMN6R5-25YLC |
| 元件分类： | 开关 |
| 英文描述： | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
| 文件页数： | 1/7页 |
| 文件大小： | 525K |
| 代理商： | PSMN6R5-25YLC |
A-78
APEM
www.apem.com
12000X778 series
High performance toggle switches - threaded bushing 11,9 (15/32)
Distinctive features
A
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Approval and lists
CECC 96201-005
CECC 96201-008
MUAHAG and QPL listed (Europe only)
French defence approved : DAT list No A5999 X001.
This range of professional toggle switches is suitable for use in military and
other high specification environments.
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Contacts
Highly reliable contacts suitable for low level applications (10mA 50mV -
10A 5VDC min.) or power applications (2A 250VAC - 4A 125VAC -
4A 30VDC max.)
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Pinned lever
The base of the switch lever is pinned to the bushing, thus earthing the lever to
the bushing. This also provides strain relief to protect the switch if accidentally
knocked.
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Double shell case
For high mechanical strength and high electrical insulation.
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Compact size
The small rear end of the switch allows space saving behind the panel.
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Finish
Matt black finish on body, bushing, lever and hardware.
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Sealing
Panel sealed to IP 67, these switches are frontal sealed by two O-rings and
have full rear end sealing.
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Accessories
A comprehensive range of protection boots (both full and half length), locking
levers and security caps are available.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| PSMN6R5-25YLC,115 | 功能描述:MOSFET N-chnl25V6.5m logic lvl MOSFET in LFPAK RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| PSMN6R5-30MLDX | 功能描述:MOSFET N-CH 30V MLFP 制造商:nexperia usa inc. 系列:- 包装:剪切带（CT） 零件状态:在售 FET 类型:N 沟道 技术:MOSFET（金属氧化物） 漏源电压（Vdss）:30V 电流 - 连续漏极（Id）（25°C 时）:65A（Tc） 驱动电压（最大 Rds On，最小 Rds On）:4.5V，10V 不同 Id 时的 Vgs（th）（最大值）:2.2V @ 1mA 不同 Vgs 时的栅极电荷?（Qg）（最大值）:13.6nC @ 10V Vgs（最大值）:±20V 不同 Vds 时的输入电容（Ciss）（最大值）:817pF @ 15V FET 功能:- 功率耗散（最大值）:51W（Tc） 不同?Id，Vgs 时的?Rds On（最大值）:6.5 毫欧 @ 15A，10V 工作温度:-55°C ~ 175°C（TJ） 安装类型:表面贴装 供应商器件封装:LFPAK33 封装/外壳:SOT-1210，8-LFPAK33（5 根引线） 标准包装:1 |
| PSMN6R5-80BS | 制造商:NXP Semiconductors 功能描述:MOSFET N CH 80V 100A D2PAK 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 80V, 100A, D2PAK 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 80V, 100A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0059ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; No. of Pins:3;RoHS Compliant: Yes |
| PSMN6R5-80BS,118 | 功能描述:MOSFET N-CH 80 V 46 MOHM MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| PSMN6R5-80PS | 制造商:NXP Semiconductors 功能描述:MOSFETN CH80V100ATO-220AB 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,80V,100A,TO-220AB 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,80V,100A,TO-220AB, Transistor Polarity:N Channel, Continuous Drain C |
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