参数资料
型号: PT91-21B
厂商: Everlight Electronics Co Ltd
文件页数: 3/7页
文件大小: 0K
描述: PHOTOTRANSISTOR 1.9MM RND BK AXL
标准包装: 1,000
电压 - 集电极发射极击穿(最大): 30V
电流 - 集电极 (Ic)(最大): 20mA
电流 - 暗 (Id)(最大): 100nA
波长: 940nm
安装类型: 通孔
方向: 顶视图
封装/外壳: 轴向,扁平引线
其它名称: 1080-1165
Data Sheet
1.9mm Round Subminiature Axial Phototransistor
PT91-21B
Absolute Maximum Ratings (Ta=25 ℃ )
Parameter
Collector-Emitter Voltage
Emitter-Collector-Voltage
Collector Current
Operating Temperature
Storage Temperature
Soldering Temperature *1
Power Dissipation at(or below)
25 ℃ Free Air Temperature
Symbol
V CEO
V ECO
I C
T opr
T stg
T sol
P d
Rating
30
5
20
-25 ~ +85
-40 ~ + 85
260
75
Units
V
V
mA
mW
Notes: *1:Soldering time ≦ 5 seconds.
Electro-Optical Characteristics (Ta=25 ℃ )
Parameter
Rang Of Spectral Bandwidth
Wavelength Of Peak Sensitivity
Collector-Emitter Breakdown
Voltage
Emitter-Collector Breakdown
Voltage
Collector-Emitter Saturation
Voltage
Collector Dark Current
On State Collector Current
Symbol
λ 0.5
λ P
BV CEO
BV ECO
V CE(sat)
I CEO
I C(ON)
Condition
---
I C =100μA
Ee=0mW/cm 2
I E =10μA
Ee=0mW/cm 2
I C =2mA
Ee=1mW/cm 2
V CE =20V
Ee=0mW/cm 2
V CE =5V
Ee=1mW/cm 2
Min
730
---
30
5
---
---
1.0
Typ
---
940
---
---
---
---
3.0
Max
1100
---
---
---
0.4
100
---
Unit
nm
nm
V
V
V
nA
mA
3
Copyright ? 2013, Everlight All Rights Reserved.Release Date :6/27/2013.Issue No: DPT-0000300.Rev:1
www.everlight.com
Revision
:1
Release Date:2013-07-05 13:53:14.0
LifecyclePhase:
Expired Period: Forever
相关PDF资料
PDF描述
PT91-21C/TR10 PHOTOTRANS 1.9MM RND CLEAR ZBEND
PT91-21C/TR7 PHOTOTRANS 1.9MM RND CLEAR GWING
PT91-21C PHOTOTRANSISTOR 1.9MM RND AXIAL
PT928-6B-F PHOTOTRANS 1.5MM SIDE CLEAR RAD
PT928-6C-F PHOTOTRANS 1.5MM SIDE CLEAR RAD
相关代理商/技术参数
参数描述
PT91-21B/F10 制造商:Everlight Electronics Co 功能描述:Phototransistor IR Chip Silicon 940nm 2-Pin SMD 制造商:Everlight Electronics Co 功能描述:PHOTOTRANSISTOR IR CHIP PLASTIC SILICON NPN TRANSISTOR 940NM - Bulk 制造商:Everlight Electronics CO., LTD 功能描述:Phototransistor IR Chip Silicon 940nm 2-Pin SMD
PT91-21B/TR10 功能描述:光电晶体管 940nm 15/15rf 1.9mm Z-Bend RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1
PT91-21B/TR7 功能描述:光电晶体管 IR Phototransistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1
PT91-21B/TR9 功能描述:光电晶体管 IR Phototransistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1
PT91-21B_07 制造商:EVERLIGHT 制造商全称:Everlight Electronics Co., Ltd 功能描述:1.9mm Round Subminiature Axial Phototransistor