参数资料
型号: PTPS659102A1RSLR
厂商: TEXAS INSTRUMENTS INC
元件分类: 电源管理
英文描述: POWER SUPPLY SUPPORT CKT, PQCC48
封装: 6 X 6 MM, 1 MM HEIGHT, GREEN, PLASTIC,VQFN-48
文件页数: 11/89页
文件大小: 941K
代理商: PTPS659102A1RSLR
PRODUCTPREVIEW
www.ti.com
SWCS046C – MARCH 2010 – REVISED JUNE 2010
VDD3 SMPS
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Input voltage VIN
3
5.5
V
DC output voltage (VOUT)
4.65
5
5.25
V
Rated output current IOUTmax
100
mA
N-channel MOSFET
VIN = 3.6 V
500
m
Ω
On-resistance RDS(ON)_NMOS
N-channel MOSFET leakage
VIN = VINmax, SW3 = VINmax
2
A
current ILK_NMOS
N-channel MOSFET DC current
VIN = VINmin to VINmax, sink current load
430
550
mA
limit
Turn-on inrush current
VIN = VINmin to VINmax
850
mA
Ripple voltage
20
mV
DC load regulation
On mode, IOUT = 0 to IOUTmax
100
mV
DC line regulation
On mode, VIN = VINmin to VINmax @ IOUT = IOUTmax
50
mV
Turn-on time
IOUT = 8 mA, VOUT = 0 to 4.4 V
200
s
Overshoot
3%
Switching frequency
1
MHz
VFB3 internal resistance
TBD
M
Ω
Ground current (IQ)
Off
1
A
IOUT = 0 mA to IOUTmax, VIN = 3.6 V
360
Conversion efficiency
VIN = 3.6 V:
IOUT = 10 mA
81%
IOUT = 50 mA
85%
IOUT = 100 mA
85%
Copyright 2010, Texas Instruments Incorporated
19
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