参数资料
| 型号： | PTVS28VP1UP,115 |
| 厂商： | NXP Semiconductors |
| 文件页数： | 3/12页 |
| 文件大小： | 0K |
| 描述： | TVS 600W UNIDIR 28V SOD128 |
| 标准包装： | 1 |
| 电压 - 反向隔离（标准值）： | 28V |
| 电压 - 击穿： | 31.1V |
| 功率（瓦特）： | 600W |
| 电极标记： | 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOD-128 |
| 供应商设备封装： | SOD-128 |
| 包装： | 标准包装 |
| 其它名称： | 568-5323-6 |
NXP Semiconductors
PTVSxP1UP series
600 W Transient Voltage Suppressor
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
P PPM
I PPM
Parameter
rated peak pulse power
rated peak pulse current
Conditions
Min
-
-
Max
600
see
Unit
W
and 10
I FSM
Non-repetitive peak
single half-sine
-
100
A
forward current
wave; t p = 8.3 ms
T j
T amb
T stg
junction temperature
ambient temperature
storage temperature
-
? 55
? 65
150
+150
+150
° C
° C
° C
[1]
In accordance with IEC 61643-321 (10/1000 μ s current waveform).
Table 6. ESD maximum ratings
T amb = 25 ° C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Max
Unit
Per diode
V ESD
electrostatic discharge voltage
IEC 61000-4-2
[1][2]
-
30
kV
(contact discharge)
[1]
[2]
Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses.
Soldering point of cathode tab.
Table 7.
Standard
Per diode
ESD standards compliance
Conditions
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
6. Thermal characteristics
> 15 kV (air); > 8 kV (contact)
> 4 kV
Table 8.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
R th(j-a)
thermal resistance from
junction to ambient
in free air
-
-
-
-
200
120
K/W
K/W
-
-
60
K/W
R th(j-sp)
thermal resistance from
-
-
12
K/W
junction to solder point
[1]
[2]
[3]
[4]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm 2 .
Device mounted on a ceramic PCB, Al 2 O 3 , standard footprint.
Soldering point of cathode tab.
PTVSXP1UP_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 6 January 2011
? NXP B.V. 2011. All rights reserved.
3 of 12
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相关代理商/技术参数 |
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| PTVS28VP1UTP | 制造商:NXP Semiconductors 功能描述:DIODE, TVS, UNI, 28V, 600W, SOD128 制造商:NXP Semiconductors 功能描述:DIODE, TVS, UNI, 28V, 600W, SOD128; TVS Polarity:Unidirectional; Reverse Stand-Off Voltage Vrwm:28V; Breakdown Voltage Min:31.1V; Breakdown Voltage Max:34.4V; Clamping Voltage Vc Max:45.4V; Peak Pulse Current Ippm:13.2A ;RoHS Compliant: Yes |
| PTVS28VP1UTP,115 | 制造商:NXP Semiconductors 功能描述:Diode TVS Single Uni-Dir 28V 600W 2-Pin SOD-128 T/R 制造商:NXP Semiconductors 功能描述:PTVS28VP1UTP/FLATPOWER/REEL7// - Tape and Reel 制造商:NXP Semiconductors 功能描述:TVS 600W 28V UNIDIR FLATPOWER 制造商:NXP Semiconductors 功能描述:High-temp 600W Transient Vltg Supp |
| PTVS28VS1UR | 制造商:NXP Semiconductors 功能描述:DIODE TVS UNI 28V 400W SOD123W 制造商:NXP Semiconductors 功能描述:DIODE, TVS, UNI, 28V, 400W, SOD123W 制造商:NXP Semiconductors 功能描述:DIODE, TVS, UNI, 28V, 400W, SOD123W, TVS Polarity:Unidirectional, Reverse Stand-Off Voltage Vrwm:28V, Breakdown Voltage Min:31.1V, Breakdown Voltage Max:34.4V, Clamping Voltage Vc Max:45.4V, Peak Pulse Current Ippm:8.8A , RoHS Compliant: Yes |
| PTVS28VS1UR,115 | 功能描述:TVS 二极管 - 瞬态电压抑制器 TVS UNI-DIR 28V 400W RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| PTVS28VS1UTR,115 | 功能描述:TVS 二极管 - 瞬态电压抑制器 UNI 34.4V 400W RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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