参数资料
| 型号： | PTVS30VP1UP,115 |
| 厂商： | NXP Semiconductors |
| 文件页数： | 4/12页 |
| 文件大小： | 0K |
| 描述： | TVS 600W UNIDIR 30V SOD128 |
| 标准包装： | 1 |
| 电压 - 反向隔离（标准值）： | 30V |
| 电压 - 击穿： | 33.3V |
| 功率（瓦特）： | 600W |
| 电极标记： | 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOD-128 |
| 供应商设备封装： | SOD-128 |
| 包装： | 标准包装 |
| 其它名称： | 568-5324-6 |
NXP Semiconductors
PTVSxP1UP series
600 W Transient Voltage Suppressor
7. Characteristics
Table 9. Characteristics per type; PTVS3V3P1UP to PTVS7V0P1UP
T j = 25 ° C unless otherwise specified.
Type number
Reverse standoff
voltage
Breakdown voltage
V BR (V)
Reverse leakage
current
Clamping voltage
V CL (V)
V RWM (V)
I R = 10 mA
I RM ( μ A)
at V RWM (V)
Max
Min
Typ
Max
Typ
Max
Max
I PPM (A)
PTVS3V3P1UP
PTVS5V0P1UP
PTVS6V0P1UP
PTVS6V5P1UP
PTVS7V0P1UP
3.3
5.0
6.0
6.5
7.0
5.20
6.40
6.67
7.22
7.78
5.60
6.70
7.02
7.60
8.20
6.00
7.00
7.37
7.98
8.60
5
5
5
5
3
600
400
400
250
100
8.0
9.2
10.3
11.2
12.0
75.0
65.2
58.3
53.6
50.0
Table 10. Characteristics per type; PTVS7V5P1UP to PTVS64VP1UP
T j = 25 ° C unless otherwise specified.
Type number
Reverse standoff
voltage
Breakdown voltage
V BR (V)
Reverse leakage
current
Clamping voltage
V CL (V)
V RWM (V)
I R = 1 mA
I RM ( μ A)
at V RWM (V)
Max
Min
Typ
Max
Typ
Max
Max
I PPM (A)
PTVS7V5P1UP
PTVS8V0P1UP
PTVS8V5P1UP
PTVS9V0P1UP
PTVS10VP1UP
PTVS11VP1UP
PTVS12VP1UP
PTVS13VP1UP
PTVS14VP1UP
PTVS15VP1UP
PTVS16VP1UP
PTVS17VP1UP
PTVS18VP1UP
PTVS20VP1UP
PTVS22VP1UP
PTVS24VP1UP
PTVS26VP1UP
PTVS28VP1UP
PTVS30VP1UP
PTVS33VP1UP
PTVS36VP1UP
PTVS40VP1UP
7.5
8.0
8.5
9.0
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
8.33
8.89
9.44
10.00
11.10
12.20
13.30
14.40
15.60
16.70
17.80
18.90
20.00
22.20
24.40
26.70
28.90
31.10
33.30
36.70
40.00
44.40
8.77
9.36
9.92
10.55
11.70
12.85
14.00
15.15
16.40
17.60
18.75
19.90
21.00
23.35
25.60
28.10
30.40
32.80
35.10
38.70
42.10
46.80
9.21
9.83
10.40
11.10
12.30
13.50
14.70
15.90
17.20
18.50
19.70
20.90
22.10
24.50
26.90
29.50
31.90
34.40
36.80
40.60
44.20
49.10
0.2
0.03
0.01
0.005
0.005
0.005
0.005
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
50
25
10
5
2.5
2.5
2.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
12.9
13.6
14.4
15.4
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
46.5
44.1
41.7
39.0
35.3
33.0
30.2
27.9
25.9
24.6
23.1
21.7
20.5
18.5
16.9
15.4
14.3
13.2
12.4
11.3
10.3
9.3
PTVSXP1UP_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 6 January 2011
? NXP B.V. 2011. All rights reserved.
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相关代理商/技术参数 |
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| PTVS30VP1UTP | 制造商:NXP Semiconductors 功能描述:DIODE, TVS, UNI, 30V, 600W, SOD128 制造商:NXP Semiconductors 功能描述:DIODE, TVS, UNI, 30V, 600W, SOD128; TVS Polarity:Unidirectional; Reverse Stand-Off Voltage Vrwm:30V; Breakdown Voltage Min:33.3V; Breakdown Voltage Max:36.8V; Clamping Voltage Vc Max:48.4V; Peak Pulse Current Ippm:12.4A ;RoHS Compliant: Yes |
| PTVS30VP1UTP,115 | 制造商:NXP Semiconductors 功能描述:Diode TVS Single Uni-Dir 30V 600W 2-Pin SOD-128 T/R 制造商:NXP Semiconductors 功能描述:PTVS30VP1UTP/FLATPOWER/REEL7// - Tape and Reel 制造商:NXP Semiconductors 功能描述:TVS 600W 30V UNIDIR FLATPOWER 制造商:NXP Semiconductors 功能描述:High-temp 600W Transient Vltg Supp |
| PTVS30VS1UR | 制造商:NXP Semiconductors 功能描述:DIODE TVS UNI 30V 400W SOD123W 制造商:NXP Semiconductors 功能描述:DIODE, TVS, UNI, 30V, 400W, SOD123W 制造商:NXP Semiconductors 功能描述:DIODE, TVS, UNI, 30V, 400W, SOD123W, TVS Polarity:Unidirectional, Reverse Stand-Off Voltage Vrwm:30V, Breakdown Voltage Min:33.3V, Breakdown Voltage Max:36.8V, Clamping Voltage Vc Max:48.4V, Peak Pulse Current Ippm:8.3A , RoHS Compliant: Yes |
| PTVS30VS1UR,115 | 功能描述:TVS 二极管 - 瞬态电压抑制器 TVS UNI-DIR 30V 400W RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| PTVS30VS1UR115 | 制造商:NXP Semiconductors 功能描述: |
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