参数资料
| 型号： | PTVS33VP1UP,115 |
| 厂商： | NXP Semiconductors |
| 文件页数： | 6/12页 |
| 文件大小： | 0K |
| 描述： | TVS 600W UNIDIR 33V SOD128 |
| 标准包装： | 3,000 |
| 电压 - 反向隔离（标准值）： | 33V |
| 电压 - 击穿： | 36.7V |
| 功率（瓦特）： | 600W |
| 电极标记： | 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOD-128 |
| 供应商设备封装： | SOD-128 |
| 包装： | 带卷 (TR) |
NXP Semiconductors
PTVSxP1UP series
600 W Transient Voltage Suppressor
150
I PP
(%)
100
100 % I PP ; 10 μ s
006aab319
1.2
P PPM
P PPM(25 ° C)
0.8
006aab321
50 % I PP ; 1000 μ s
50
0
0.4
0
0
1.0
2.0
3.0
t p (ms)
4.0
0
50
100
150
T j ( ° C)
200
Fig 1.
10/1000 μ s pulse waveform according to
IEC 61643-321
Fig 2.
Relative variation of rated peak pulse power as
a function of junction temperature; typical
values
10 5
P PPM
(W)
10 4
006aac172
10 4
C d
(pF)
10 3
(1)
006aac173
(2)
(3)
10 3
10 2
(4)
10 2
10 ? 1
1
10
10 2
10 3
t p ( μ s)
10 4
10
1
10
V R (V)
10 2
T amb = 25 ° C
T amb = 25 ° C; f = 1 MHz
(1) PTVS5V0P1UP
(2) PTVS12VP1UP
(3) PTVS24VP1UP
(4) PTVS64VP1UP
Fig 3.
Rated peak pulse power as a function of pulse
duration; typical values
Fig 4.
Diode capacitance as a function of reverse
voltage; typical values
PTVSXP1UP_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 6 January 2011
? NXP B.V. 2011. All rights reserved.
6 of 12
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相关代理商/技术参数 |
参数描述 |
|---|---|
| PTVS33VP1UTP | 制造商:NXP Semiconductors 功能描述:DIODE, TVS, UNI, 33V, 600W, SOD128 制造商:NXP Semiconductors 功能描述:DIODE, TVS, UNI, 33V, 600W, SOD128; TVS Polarity:Unidirectional; Reverse Stand-Off Voltage Vrwm:33V; Breakdown Voltage Min:36.7V; Breakdown Voltage Max:40.6V; Clamping Voltage Vc Max:53.3V; Peak Pulse Current Ippm:11.3A ;RoHS Compliant: Yes |
| PTVS33VP1UTP,115 | 制造商:NXP Semiconductors 功能描述:Diode TVS Single Uni-Dir 33V 600W 2-Pin SOD-128 T/R 制造商:NXP Semiconductors 功能描述:PTVS33VP1UTP/FLATPOWER/REEL7// - Tape and Reel 制造商:NXP Semiconductors 功能描述:TVS 600W 33V UNIDIR FLATPOWER 制造商:NXP Semiconductors 功能描述:High-temp 600W Transient Vltg Supp |
| PTVS33VS1UR | 制造商:NXP Semiconductors 功能描述:DIODE TVS UNI 33V 400W SOD123W 制造商:NXP Semiconductors 功能描述:DIODE, TVS, UNI, 33V, 400W, SOD123W 制造商:NXP Semiconductors 功能描述:DIODE, TVS, UNI, 33V, 400W, SOD123W; TVS Polarity:Unidirectional; Reverse Stand-Off Voltage Vrwm:33V; Breakdown Voltage Min:36.7V; Breakdown Voltage Max:40.6V; Clamping Voltage Vc Max:53.3V; Peak Pulse Current Ippm:7.5A ;RoHS Compliant: Yes |
| PTVS33VS1UR,115 | 功能描述:TVS 二极管 - 瞬态电压抑制器 TVS UNI-DIR 33V 400W RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| PTVS33VS1UR115 | 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述: |
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