参数资料
| 型号： | PTVS33VS1UTR,115 |
| 厂商： | NXP Semiconductors |
| 文件页数： | 4/12页 |
| 文件大小： | 0K |
| 描述： | TVS UNIDIR 400W 33V SOD123W |
| 标准包装： | 3,000 |
| 电压 - 反向隔离（标准值）： | 33V |
| 电压 - 击穿： | 36.7V |
| 功率（瓦特）： | 400W |
| 电极标记： | 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOD-123W |
| 供应商设备封装： | SOD123W |
| 包装： | 带卷 (TR) |
| 其它名称： | PTVS33VS1UTR115 |
NXP Semiconductors
PTVSxS1UTR series
High-temperature 400 W Transient Voltage Suppressor
6. Thermal characteristics
Table 8.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
R th(j-a)
thermal resistance from
junction to ambient
in free air
-
-
-
-
220
130
K/W
K/W
-
-
70
K/W
R th(j-sp)
thermal resistance from
-
-
18
K/W
junction to solder point
[1]
[2]
[3]
[4]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm 2 .
Device mounted on a ceramic PCB, Al 2 O 3 , standard footprint.
Soldering point of cathode tab.
7. Characteristics
Table 9. Characteristics per type; PTVS3V3S1UTR to PTVS7V0S1UTR
T j = 25 ? C unless otherwise specified.
Type
number
PTVSxxx
Reverse
standoff
voltage
Breakdown voltage
V BR (V)
Reverse leakage current
I RM ( ? A)
Clamping
voltage V CL (V)
Temperature
coefficient
S Z (mV/K)
S1UTR
V RWM (V)
I R = 10 mA
at V RWM
at V RWM
T j = 150 ? C
I Z = 5 mA
Max
Min
Typ
Max
Typ
Max
Typ
Max
I PPM (A) Typ
3V3
5V0
6V0
6V5
7V0
3.3
5.0
6.0
6.5
7.0
5.20
6.40
6.67
7.22
7.78
5.60
6.70
7.02
7.60
8.20
6.00
7.00
7.37
7.98
8.60
5
5
5
5
3
600
400
400
250
100
17
17
17
17
9
8.0
9.2
10.3
11.2
12.0
43.8
43.5
38.8
35.7
33.3
? 1.0
2.5
3.2
3.6
4.3
PTVSXS1UTR_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 11 October 2011
? NXP B.V. 2011. All rights reserved.
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