参数资料
| 型号： | PTVS64VS1UR,115 |
| 厂商： | NXP Semiconductors |
| 文件页数： | 4/12页 |
| 文件大小： | 0K |
| 描述： | TVS UNI-DIR 64V 400W SOD123W |
| 标准包装： | 1 |
| 电压 - 反向隔离（标准值）： | 64V |
| 电压 - 击穿： | 71.1V |
| 功率（瓦特）： | 400W |
| 电极标记： | 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOD-123W |
| 供应商设备封装： | SOD123W |
| 包装： | 标准包装 |
| 其它名称： | 568-7465-6 |
NXP Semiconductors
PTVSxS1UR series
400 W Transient Voltage Suppressor
6. Thermal characteristics
Table 8.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
R th(j-a)
thermal resistance from
junction to ambient
in free air
-
-
-
-
220
130
K/W
K/W
-
-
70
K/W
R th(j-sp)
thermal resistance from
-
-
18
K/W
junction to solder point
[1]
[2]
[3]
[4]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm 2 .
Device mounted on a ceramic PCB, Al 2 O 3 , standard footprint.
Soldering point of cathode tab.
7. Characteristics
Table 9. Characteristics per type; PTVS3V3S1UR to PTVS7V0S1UR
T j = 25 ° C unless otherwise specified.
Type number
Reverse standoff
voltage
Breakdown voltage
V BR (V)
Reverse leakage
current
Clamping voltage
V CL (V)
V RWM (V)
I R = 10 mA
I RM ( μ A)
at V RWM (V)
Max
Min
Typ
Max
Typ
Max
Max
I PPM (A)
PTVS3V3S1UR
PTVS5V0S1UR
PTVS6V0S1UR
PTVS6V5S1UR
PTVS7V0S1UR
3.3
5.0
6.0
6.5
7.0
5.20
6.40
6.67
7.22
7.78
5.60
6.70
7.02
7.60
8.20
6.00
7.00
7.37
7.98
8.60
5
5
5
5
3
600
400
400
250
100
8.0
9.2
10.3
11.2
12.0
43.8
43.5
38.8
35.7
33.3
Table 10. Characteristics per type; PTVS7V5S1UR to PTVS64VS1UR
T j = 25 ° C unless otherwise specified.
Type number
Reverse standoff
voltage
Breakdown voltage
V BR (V)
Reverse leakage
current
Clamping voltage
V CL (V)
V RWM (V)
I R = 1 mA
I RM ( μ A)
at V RWM (V)
Max
Min
Typ
Max
Typ
Max
Max
I PPM (A)
PTVS7V5S1UR
PTVS8V0S1UR
PTVS8V5S1UR
PTVS9V0S1UR
PTVS10VS1UR
PTVS11VS1UR
PTVS12VS1UR
PTVS13VS1UR
7.5
8.0
8.5
9.0
10
11
12
13
8.33
8.89
9.44
10.00
11.10
12.20
13.30
14.40
8.77
9.36
9.92
10.55
11.70
12.85
14.00
15.15
9.21
9.83
10.40
11.10
12.30
13.50
14.70
15.90
0.2
0.03
0.01
0.005
0.005
0.005
0.005
0.001
50
25
10
5
2.5
2.5
2.5
0.1
12.9
13.6
14.4
15.4
17.0
18.2
19.9
21.5
31.0
29.4
27.8
26.0
23.5
22.0
20.1
18.6
PTVSxS1UR_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 10 January 2011
? NXP B.V. 2011. All rights reserved.
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相关代理商/技术参数 |
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| PTVS64VS1UTR | 制造商:NXP Semiconductors 功能描述:Cut Tape 制造商:NXP Semiconductors 功能描述:Diode TVS Single Uni-Dir 64V 400W 2-Pin SOD-123W |
| PTVS64VS1UTR,115 | 功能描述:TVS 二极管 - 瞬态电压抑制器 UNI 78.6V 400W RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| PTVS6V0P1UP | 制造商:NXP Semiconductors 功能描述:DIODE TVS UNIDIR 6V 600W SOD128 制造商:NXP Semiconductors 功能描述:DIODE, TVS, UNIDIR, 6V, 600W, SOD128 制造商:NXP Semiconductors 功能描述:DIODE, TVS, UNIDIR, 6V, 600W, SOD128, TVS Polarity:Unidirectional, Reverse Stand-Off Voltage Vrwm:6V, Breakdown Voltage Min:6.67V, Breakdown Voltage Max:7.37V, Clamping Voltage Vc Max:10.3V, Peak Pulse Current Ippm:58.3A , RoHS Compliant: Yes |
| PTVS6V0P1UP,115 | 功能描述:TVS 二极管 - 瞬态电压抑制器 UNI 1CH 7.02V 58.3A RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| PTVS6V0P1UTP | 制造商:NXP Semiconductors 功能描述:DIODE, TVS, UNI, 6V, 600W, SOD128 制造商:NXP Semiconductors 功能描述:DIODE, TVS, UNI, 6V, 600W, SOD128, TVS Polarity:Unidirectional, Reverse Stand-Off Voltage Vrwm:6V, Breakdown Voltage Min:6.67V, Breakdown Voltage Max:7.37V, Clamping Voltage Vc Max:10.3V, Peak Pulse Current Ippm:58.3A, No. of Pins:2 , RoHS Compliant: Yes |
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