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| 型号： | PTVS6V5S1UR,115 |
| 厂商： | NXP Semiconductors |
| 文件页数： | 3/12页 |
| 文件大小： | 0K |
| 描述： | TVS UNI-DIR 6.5V 400W SOD123W |
| 标准包装： | 1 |
| 电压 - 反向隔离（标准值）： | 6.5V |
| 电压 - 击穿： | 7.22V |
| 功率（瓦特）： | 400W |
| 电极标记： | 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOD-123W |
| 供应商设备封装： | SOD123W |
| 包装： | 标准包装 |
| 其它名称： | 568-7466-6 |
NXP Semiconductors
PTVSxS1UR series
400 W Transient Voltage Suppressor
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
P PPM
I PPM
Parameter
rated peak pulse power
rated peak pulse current
Conditions
[1][2]
Min
-
-
Max
400
see
Unit
W
and 10
I FSM
Non-repetitive peak
single half-sine
-
50
A
forward current
wave; t p = 8.3 ms
T j
T amb
T stg
junction temperature
ambient temperature
storage temperature
-
? 55
? 65
150
+150
+150
° C
° C
° C
[1]
[2]
In accordance with IEC 61643-321 (10/1000 μ s current waveform).
For PTVS3V3S1UR: P PPM = 350 W
Table 6. ESD maximum ratings
T amb = 25 ° C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Max
Unit
Per diode
V ESD
electrostatic discharge voltage
IEC 61000-4-2
[1][2]
-
30
kV
(contact discharge)
[1]
[2]
Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses.
Soldering point of cathode tab.
Table 7.
Standard
Per diode
ESD standards compliance
Conditions
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
> 15 kV (air); > 8 kV (contact)
> 4 kV
PTVSxS1UR_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 10 January 2011
? NXP B.V. 2011. All rights reserved.
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