参数资料
型号: PTVS9V0S1UTR,115
厂商: NXP Semiconductors
文件页数: 3/12页
文件大小: 0K
描述: TVS UNIDIR 400W 9.0V SOD123W
标准包装: 3,000
电压 - 反向隔离(标准值): 9V
电压 - 击穿: 10V
功率(瓦特): 400W
电极标记: 单向
安装类型: 表面贴装
封装/外壳: SOD-123W
供应商设备封装: SOD123W
包装: 带卷 (TR)
其它名称: PTVS9V0S1UTR115
NXP Semiconductors
PTVSxS1UTR series
High-temperature 400 W Transient Voltage Suppressor
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
P PPM
I PPM
Parameter
rated peak pulse power
rated peak pulse current
Conditions
[1][2]
Min
-
-
Max
400
see
Unit
W
and 10
I FSM
non-repetitive peak forward single half-sine
-
50
A
current
wave; t p = 8.3 ms
T j
T amb
T stg
junction temperature
ambient temperature
storage temperature
-
? 55
? 65
185
+185
+185
? C
? C
? C
[1]
[2]
In accordance with IEC 61643-321 (10/1000 ? s current waveform).
For PTVS3V3S1UTR: P PPM = 350 W
Table 6. ESD maximum ratings
T amb = 25 ? C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Max
Unit
Per diode
V ESD
electrostatic discharge
IEC 61000-4-2; level 4
-
30
kV
voltage
(contact discharge)
[1]
Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses.
Table 7.
Standard
Per diode
ESD standards compliance
Conditions
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3B (human body model)
> 15 kV (air); > 8 kV (contact)
> 8 kV
PTVSXS1UTR_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 11 October 2011
? NXP B.V. 2011. All rights reserved.
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