- 您现在的位置：买卖IC网 > PDF目录299794 > PUMA77S4000-020 10NS, 100 TQFP, COM TEMP(EPLD) PDF资料下载
参数资料
| 型号： | PUMA77S4000-020 |
| 英文描述： | 10NS, 100 TQFP, COM TEMP(EPLD) |
| 中文描述： | X32号的SRAM模块 |
| 文件页数： | 7/10页 |
| 文件大小： | 339K |
| 代理商： | PUMA77S4000-020 |
PUMA2/67/77S4000/A-020/025/35
Issue 4.3 : December 1999
6
AC Characteristics Notes
(1) A write occurs during the overlap (t
WP) of a low CS and a low WE.
(2) t
WR is measured from the earlier of CS or WE going high to the end of write cycle.
(3) During this period, I/O pins are in the output state. Input signals out of phase must not be applied.
(4) If the CS low transition occurs simultaneously with the WE low transition or after the WE low transition, outputs remain
in a high impedance state.
(5) OE is continuously low. (OE=V
IL)
(6) D
OUT is in the same phase as written data of this write cycle.
(7) D
OUT is the read data of next address.
(8) If CS is low during this period, I/O pins are in the output state. Input signals out of phase must not be applied.
(9) t
WHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced
to output voltage levels. These parameters are sampled and not 100% tested.
Write Cycle No.2 Timing Waveform (5)
CS1~4
tWR(2)
tCW (4)
(6)
t AW
tWC
A0~A16
t
WP(1)
DW
tDH
WE1~4
D0~31out
D0~31in
WHZ(3,9)
t AS(3)
t OW
tOH
(7)
(8)
High-Z
WE above refers to WE1~4 on the PUMA 2S4000, 67S4000A AND 77S4000A.
Low V
CC Data Retention Timing Waveform
t R
tCDR
4.5V
2.2V
4.5V
2.2V
0V
DATA RETENTION MODE
Vcc
CS1~4
V DR
CS1~4 > Vcc-0.2V
Powered by ICminer.com Electronic-Library Service CopyRight 2003
相关PDF资料 |
PDF描述 |
|---|---|
| PUMA77S4000-025 | x32 SRAM Module |
| PUMA77S4000-35 | x32 SRAM Module |
| PUMA77S4000A-020 | x32 SRAM Module |
| PUMA77S4000A-025 | 10NS, 84 PLCC, COM TEMP(EPLD) |
| PUMA77S4000A-35 | 10NS, 100 PQFP, COM TEMP(EPLD) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| PUMB1 | 制造商:NXP Semiconductors 功能描述:TRANSISTOR DUAL DIGITAL SOT-363 |
| PUMB1 T/R | 功能描述:开关晶体管 - 偏压电阻器 TRNS DOUBL RET TAPE7 RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel |
| PUMB1,115 | 功能描述:开关晶体管 - 偏压电阻器 TRNS DOUBL RET TAPE7 RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel |
| PUMB1,135 | 功能描述:开关晶体管 - 偏压电阻器 Trans Digital BJT PNP 50V 100mA 6-Pin RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel |
| PUMB10 | 制造商:NXP Semiconductors 功能描述:TRANSISTOR DIGITAL DUAL SOT-363 制造商:NXP Semiconductors 功能描述:TRANSISTOR, DIGITAL, DUAL, SOT-363 制造商:NXP Semiconductors 功能描述:Dual P/P Transistor,2k2,47k,SOT-363 |
发布紧急采购，3分钟左右您将得到回复。