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参数资料
| 型号： | PXTA93 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | PNP high-voltage transistor |
| 中文描述： | 500 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 文件页数： | 3/8页 |
| 文件大小： | 52K |
| 代理商： | PXTA93 |
1999 Apr 29
3
Philips Semiconductors
Product specification
PNP high-voltage transistor
PXTA92
THERMAL CHARACTERISTICS
Note
1.
Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm
2
.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
Note
1.
Pulse test: t
p
≤
300
μ
s;
δ ≤
0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
R
th j-s
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
note 1
96
16
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
250
100
UNIT
I
CBO
I
EBO
h
FE
collector cut-off current
emitter cut-off current
DC current gain
I
E
= 0; V
CB
=
200 V
I
C
= 0; V
BE
=
3 V
V
CE
=
10 V; note 1
I
C
=
1 mA
I
C
=
10 mA
I
C
=
30 mA
I
C
=
20 mA; I
B
=
2 mA
I
C
=
20 mA; I
B
=
2 mA
I
E
= i
e
= 0; V
CB
=
20 V;
f = 1 MHz
I
C
=
10 mA; V
CE
=
20 V;
f = 100 MHz
nA
nA
25
40
25
500
900
6
V
CEsat
V
BEsat
C
c
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
mV
mV
pF
f
T
transition frequency
50
MHz
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