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参数资料
| 型号： | PZ2024B20U |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 功率晶体管 |
| 英文描述： | NPN microwave power transistors |
| 中文描述： | S BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件页数： | 4/16页 |
| 文件大小： | 131K |
| 代理商： | PZ2024B20U |
1997 Feb 19
4
Philips Semiconductors
Product specification
NPN microwave power transistors
PZ1418B30U; PZ1721B25U;
PZ2024B20U
THERMAL CHARACTERISTICS
Note
1.
See “Mounting recommendations in the General part of handbook SC15”
CHARACTERISTICS
T
mb
= 25
°
C unless otherwise specified.
APPLICATION INFORMATION
PZ1418B30U
Microwave performance up to T
mb
= 25
°
C in a common base class B wideband amplifier.
SYMBOL
PARAMETER
CONDITIONS
T
j
= 75
°
C
T
j
= 75
°
C; note 1
MAX.
UNIT
R
th j-mb
R
th mb-h
thermal resistance from junction to mounting-base
thermal resistance from mounting-base to heatsink
2.2
0.2
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
I
CBO
collector cut-off current
V
CB
= 40 V; I
E
= 0
V
CB
= 30 V; I
E
= 0
V
CE
= 35 V; R
BE
= 0
V
EB
= 1.5 V; I
C
= 0
10
5
50
200
mA
mA
mA
μ
A
I
CES
I
EBO
collector cut-off current
emitter cut-off current
TYPE
NUMBER
f
(GHz)
V
CC
(V)
P
L
(W)
≥
27
typ. 35
G
p
(dB)
≥
7.3
typ. 8.4
η
C
(%)
≥
38
typ. 45
Z
i
; Z
L
(
)
PZ1418B30U
1.4 to 1.8
28
see Figs 6 and 7
Fig.3 Wideband test circuit board for 1.4 to 1.8 GHz operation (PZ1418B30U).
Dimensions in mm.
Substrate: Epsilam printed-circuit board.
Thickness: 0.635 mm.
Permittivity:
ε
r
= 10.
handbook, full pagewidth
MGK064
input
50
100 pF
(ATC)
4
5
5
2
5.5
2
2
0.65
6.5
8.5
0.65
12
21
4
output
50
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