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参数资料
| 型号： | PZM11NB |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 参考电压二极管 |
| 英文描述： | Voltage regulator diodes |
| 中文描述： | 11 V, 0.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-236 |
| 封装： | PLASTIC, SC-59, 3 PIN |
| 文件页数： | 3/12页 |
| 文件大小： | 75K |
| 代理商： | PZM11NB |
1999 Jan 28
3
Philips Semiconductors
Product specification
Voltage regulator diodes
PZM-N series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
F
I
ZSM
continuous forward current
non-repetitive peak current
see Tables 1 and 2
250
mA
t
p
= 100
μ
s; square wave;
T
amb
= 25
°
C prior to surge
T
amb
= 25
°
C
P
tot
T
stg
T
j
total power dissipation
storage temperature
operating junction temperature
65
300
+150
150
mW
°
C
°
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point T
s
= 60
°
C
300
K/W
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
V
F
forward voltage
I
F
= 10 mA; see Fig.2
I
F
= 100 mA; see Fig.2
0.9
1.1
V
V
I
R
reverse current
PZM2.4N
PZM2.7N
PZM3.0N
PZM3.3N
PZM3.6N
PZM3.9N
PZM4.3N
PZM4.7N
PZM5.1N
PZM5.6N
PZM6.2N
PZM6.8N
PZM7.5N
PZM8.2N
PZM9.1N
PZM10N
PZM11N
PZM12N
PZM13N
PZM15N
PZM16N
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1.5 V
V
R
= 2.5 V
V
R
= 3.0 V
V
R
= 3.5 V
V
R
= 4.0 V
V
R
= 5.0 V
V
R
= 6.0 V
V
R
= 7.0 V
V
R
= 8.0 V
V
R
= 9.0 V
V
R
= 10.0 V
V
R
= 11.0 V
V
R
= 12.0 V
50
20
10
5
5
3
3
3
3
2
2
2
1
700
500
200
100
100
100
70
70
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
nA
nA
nA
nA
nA
nA
nA
nA
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相关代理商/技术参数 |
参数描述 |
|---|---|
| PZM11NB,115 | 功能描述:稳压二极管 DIODE ZENER TAPE-7 RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel |
| PZM11NB1 | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Voltage regulator diodes |
| PZM11NB1,115 | 功能描述:稳压二极管 DIODE ZENER TAPE-7 RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel |
| PZM11NB2 | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Voltage regulator diodes |
| PZM11NB2 T/R | 功能描述:稳压二极管 DIODE ZENER TAPE-7 RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel |
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