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参数资料
| 型号： | PZTA29 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Applications requiring extremely high current gain at collector currents to 500mA |
| 中文描述： | 800 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SOT-223, 4 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 82K |
| 代理商： | PZTA29 |
2005 Fairchild Semiconductor Corporation
PZTA29 Rev. A
1
www.fairchildsemi.com
P
PZTA29
NPN Darlington Transistor
This device designed for applications requiring extremely high
current gain at collector currents to 500mA.
Sourced from process 03.
Absolute Maximum Ratings *
T
a
= 25
°
C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady limits. The factory should be consulted on application involving pulsed or low duty cycle operations
Electrical Characteristics
T
a
= 25°C unless otherwise noted
* Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
Symbol
Parameter
Value
Units
V
CES
V
CBO
V
EBO
I
C
T
J
, T
STG
Collector-Emitter Voltage
100
V
Collector-Base Voltage
100
V
Emitter-Base Voltage
12
V
Collector Current - Continuous
800
mA
Operating and Storage Junction Temperature Range
-55 to +150
°
C
Symbol
Parameter
Conditions
Min.
Max
Units
Off Characteristics
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CES
I
EBO
On Characteristics
Collector-Emitter Breakdown Voltage
I
C
= 100
μ
A, V
BE
= 0
I
C
= 100
μ
A, I
E
= 0
I
E
= 10
μ
A, I
C
= 0
V
CB
= 80V, I
E
= 0
V
CE
= 80V, V
BE
= 0
V
EB
= 10V, I
C
= 0
100
V
Collector-Base Breakdown Voltage
100
V
Emitter-Base Breakdown Voltage
12
V
Collector Cutoff Current
100
nA
Collector Cutoff Current
500
nA
Emitter Cut-off Current
100
nA
h
FE
DC Current Gain
V
CE
= 5.0V, I
C
= 10mA
V
CE
= 5.0V, I
C
= 100mA
I
C
= 10mA, I
B
= 0.01mA
I
C
= 100mA, I
B
= 0.1mA
I
C
= 100mA, V
CE
= 5.0V
10,000
10,000
V
CE(sat)
Collector-Emitter Saturation Voltage
1.2
1.5
V
V
V
BE(on)
Small Signal characteristics
Base-Emitter On Voltage
2.0
V
f
T
C
obo
Current Gain Bandwidth Product
I
C
= 10mA, V
CE
= 5.0V, f = 100MHz
V
CB
= 1.0V, I
E
= 0, f = 1.0MHz
125
MHz
Output Capacitance
8.0
pF
SOT-223
1. Base 2.4. Collector 3. Emitter
1
2
4
3
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| PZTA29_F081 | 功能描述:达林顿晶体管 100V BIP NPN DARLINGTON SOT223 RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| PZTA42 | 功能描述:两极晶体管 - BJT NPN Transistor High Voltage RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| PZTA42 T/R | 功能描述:两极晶体管 - BJT TRANS HV TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| PZTA42,115 | 功能描述:两极晶体管 - BJT TRANS HV TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| PZTA42 | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR NPN SOT-223 |
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