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参数资料
型号： Q2008NH4RP
元件分类： 晶闸管
英文描述： 200 V, 8 A, ALTERNISTOR TRIAC, TO-263AB
封装： TO-263, D2PAK-3
文件页数： 9/10页
文件大小： 237K
代理商： Q2008NH4RP
Alternistor Triacs
Data Sheets
http://www.littelfuse.com
E4 - 8
2004 Littelfuse, Inc.
+1 972-580-7777
Thyristor Product Catalog
Figure E4.7 Normalized DC Gate Trigger Voltage for all Quadrants
versus Case Temperature
Figure E4.8 Normalized DC Gate Trigger Current for all Quadrants
versus Case Temperature
Figure E4.9 Normalized DC Holding Current versus Case Temperature
Figure E4.10 Peak Surge Current versus Surge Current Duration
(6 A to 12 A)
Figure E4.11 Peak Surge Current versus Surge Current Duration
(16 A to 40 A)
Figure E4.12 Turn-on Time versus Gate Trigger Current (Typical)
0
.5
1.0
1.5
2.0
-65
-15
+65
+25
+125
-40
Case Temperature (T
C) – C
V
GT
(T
C
=
25
C)
Ratio
of
V
GT
0
1.0
2.0
3.0
4.0
-65
-15
+65
+25
+125
-40
Case Temperature (T
C) – C
I GT
(T
C
=
25
C)
Ratio
of
I GT
0
1.0
2.0
3.0
4.0
-65
-15
+65
+25
+125
-40
Case Temperature (T
C) – C
I H
(T
C
=
25
C)
Ratio
of
I H
INITIAL ON-STATE CURRENT
= 400 mA dc 16 A to 40 A Devices
= 100 mA dc 6 to 12A Devices
200
120
40
1
2
3 45 6
8 10
20
30 40
60 80 100
200
300
600
1000
80
60
50
100
8
6
5
10
30
20
4
1
3
2
Surge Current Duration – Full Cycles
Peak
Surge
(Non-Repetitive)
On-state
Current
(I
TSM
)–
Amps
SUPPLY FREQUENCY: 60 Hz Sinusoidal
LOAD: Resistive
RMS ON-STATE CURRENT [IT(RMS)]: Maximum
Rated Value at Specified Case Temperature
Notes:
1) Gate control may be lost during and
immediately following surge current
interval
2) Overload may not be repeated until
junction temperature has returned
to steady state rated value.
10 A to 12 A Devices
8 A TO-251
and TO-252
8 A Devices
6 A Devices
6 A TO-251
and TO-252
110
100
1000
10
20
30
40
50
60
80
100
250
300
400
1000
Surge Current Duration – Full Cycles
Peak
Surge
(Non-repetitive)
On-state
Current
(I
TSM
)–
Amps
200
Notes:
1) Gate control may be lost during and
immediately following surge current
interval.
2) Overload may not be repeated until
junction temperature has returned to
steady-state rated value.
SUPPLY FREQUENCY: 60Hz Sinusoidal
LOAD: Resistive
RMS ON-STATE CURRENT [IT(RMS)]: Maximum
Rated Value at Specified Case Temperature
40 A Devices
35 A Devices
30 A Devices
25 A Devices
16 A Devices
0
100
200
300
400
500
0
2
4
6
8
10
DC Gate Trigger Current (IGT) – mA
IGT = 80 to 100 mA
T
y
pical
T
u
rn-on
Time
(t
gt
)–
s
IGT = 10 mA to 35 mA
IGT = 50 mA
相关PDF资料
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相关代理商/技术参数
参数描述
Q2008NH4TP 功能描述:双向可控硅 200V 8A 25-25-25mA RoHS:否 制造商:STMicroelectronics 开启状态 RMS 电流 (It RMS):16 A 不重复通态电流:120 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态电压: 保持电流（Ih 最大值）:45 mA 栅触发电压 (Vgt):1.3 V 栅触发电流 (Igt):1.75 mA 最大工作温度: 安装风格:Through Hole 封装 / 箱体:TO-220AB
Q2008R4 功能描述:双向可控硅 200V 8A 25-25-25mA RoHS:否 制造商:STMicroelectronics 开启状态 RMS 电流 (It RMS):16 A 不重复通态电流:120 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态电压: 保持电流（Ih 最大值）:45 mA 栅触发电压 (Vgt):1.3 V 栅触发电流 (Igt):1.75 mA 最大工作温度: 安装风格:Through Hole 封装 / 箱体:TO-220AB
Q2008RH4 功能描述:双向可控硅 200V 8A RoHS:否 制造商:STMicroelectronics 开启状态 RMS 电流 (It RMS):16 A 不重复通态电流:120 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态电压: 保持电流（Ih 最大值）:45 mA 栅触发电压 (Vgt):1.3 V 栅触发电流 (Igt):1.75 mA 最大工作温度: 安装风格:Through Hole 封装 / 箱体:TO-220AB
Q2008VH3 功能描述:双向可控硅 200V 8A RoHS:否 制造商:STMicroelectronics 开启状态 RMS 电流 (It RMS):16 A 不重复通态电流:120 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态电压: 保持电流（Ih 最大值）:45 mA 栅触发电压 (Vgt):1.3 V 栅触发电流 (Igt):1.75 mA 最大工作温度: 安装风格:Through Hole 封装 / 箱体:TO-220AB
Q2008VH3TP 功能描述:双向可控硅 200V 8A RoHS:否 制造商:STMicroelectronics 开启状态 RMS 电流 (It RMS):16 A 不重复通态电流:120 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态电压: 保持电流（Ih 最大值）:45 mA 栅触发电压 (Vgt):1.3 V 栅触发电流 (Igt):1.75 mA 最大工作温度: 安装风格:Through Hole 封装 / 箱体:TO-220AB
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