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参数资料
| 型号： | Q4010N456 |
| 元件分类： | 晶闸管 |
| 英文描述： | 4 QUADRANT LOGIC LEVEL TRIAC, TO-263AA |
| 封装： | ROHS COMPLIANT, PLASTIC, D2PAK-3 |
| 文件页数： | 2/9页 |
| 文件大小： | 935K |
| 代理商： | Q4010N456 |
90
Revised: November 1, 2010 05:04 PM
2010 Littelfuse, Inc
Teccor brand Thyristors
Specifications are subject to change without notice.
Please refer to http://www.littelfuse.com for current information.
10 Amp Standard & Alternistor (High Communitation) Triacs
Qxx10xx & Qxx10xHx Series
Absolute Maximum Ratings — Standard Triac
Symbol
Parameter
Value
Unit
I
T(RMS)
RMS on-state current (full sine wave)
Qxx10Ry/
Qxx10Ny
T
C = 95°C
10
A
Qxx10Ly
T
C = 90°C
I
TSM
Non repetitive surge peak on-state current
(full cycle, T
J initial = 25°C)
f = 50 Hz
t = 20 ms
100
A
f = 60 Hz
t = 16.7 ms
120
I2t
I2t Value for fusing
t
p = 8.3 ms
60
A2s
di/dt
Critical rate of rise of on-state current
I
G = 200mA with ≤ 0.1μs rise time
f = 120 Hz
T
J = 125°C
70
A/μs
I
GTM
Peak gate trigger current
t
p ≤ 10 μs
I
GT ≤ IGTM
T
J = 125°C
1.8
A
P
G(AV)
Average gate power dissipation
T
J = 125°C
0.5
W
T
stg
Storage temperature range
-40 to 150
°C
T
J
Operating junction temperature range
-40 to 125
°C
Absolute Maximum Ratings — Alternistor Triac (3 Quadrants)
Symbol
Parameter
Value
Unit
I
T(RMS)
RMS on-state current (full sine wave)
Qxx10LHy
T
C = 90°C
10
A
Qxx10RHy/
Qxx10NHy
T
C = 95°C
I
TSM
Non repetitive surge peak on-state current
(full cycle, T
J initial = 25°C)
f = 50 Hz
t = 20 ms
110
A
f = 60 Hz
t = 16.7 ms
120
I2t
I2t Value for fusing
t
p = 8.3 ms
60
A2s
di/dt
Critical rate of rise of on-state current
f = 120 Hz
T
J = 125°C
70
A/μs
I
GTM
Peak gate trigger current
t
p ≤ 10 μs
I
GT ≤ IGTM
T
J = 125°C
2.0
A
P
G(AV)
Average gate power dissipation
T
J = 125°C
0.5
W
T
stg
Storage temperature range
-40 to 150
°C
T
J
Operating junction temperature range
-40 to 125
°C
Electrical Characteristics (T
J = 25°C, unless otherwise specified) — Standard Triac
Symbol
Test Conditions
Quadrant
Qxx10x4
Qxx10x5
Unit
I
GT
V
D = 12V RL = 60 Ω
I – II – III
IV
MAX.
25
50
75 (TYP)
mA
V
GT
I – II – III
MAX.
1.3
V
GD
V
D = VDRM RL = 3.3 kΩ TJ = 125°C
ALL
MIN.
0.2
V
I
H
I
T = 200mA
MAX.
35
50
mA
dv/dt
V
D = VDRM Gate Open TJ = 125°C
400V
MIN.
150
225
V/μs
600V
100
200
800V
75
175
V
D = VDRM Gate Open TJ = 100°C
1000V
50
150
(dv/dt)c
(di/dt)c = 5.4 A/ms T
J = 125°C
TYP.
2
4
V/μs
t
gt
I
G = 2 x IGT PW = 15s IT = 14.1 A(pk)
TYP.
3.0
μs
Note: xx = voltage, x = package, y = sensitivity
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