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参数资料
| 型号： | Q4025P |
| 元件分类： | 晶闸管 |
| 英文描述： | 400 V, 25 A, ALTERNISTOR TRIAC |
| 封装： | ISOLATED TO-3, FASTPAK-3 |
| 文件页数： | 10/10页 |
| 文件大小： | 771K |
| 代理商： | Q4025P |
Thyristor Product Catalog
Alternistor Triacs
Teccor Electronics
http://www.teccor.com
+1 972-580-7777
4 - 9
Figure 4.11 Peak Surge Current vs Surge Current Duration
(16-40 Amp Devices)
Figure 4.12 Turn-On Time vs Gate Trigger Current (Typical)
Figure 4.13 Power Dissipation (Typical) vs On-State Current
(6-12 Amp Devices)
Figure 4.14 Power Dissipation (Typical) vs On-State Current
(16 Amp Devices)
Figure 4.15 Power Dissipation (Typical) vs On-State Current
(25 and 40 Amp Devices)
Figure 4.16 Maximum Allowable Ambient Temperature vs On-State
Current
40 AMP
25 AMP
16 AM
P
110
100
1000
10
20
30
40
50
60
80
100
250
300
400
1000
Surge Current Duration — Full Cycles
P
e
ak
Surge
(Non-Repetitiv
e)
On-State
Current
(I
TSM
)—
Amps
200
1) GATE CONTROL MAY BE LOST
DURING AND IMMEDIATELY
FOLLOWING SURGE CURRENT
INTERVAL.
2) OVERLOAD MAY NOT BE
REPEATED UNTIL JUNCTION
TEMPERATURE HAS RETURNED
TO STEADY-STATE RATED VALUE.
SUPPLY FREQUENCY: 60Hz Sinusoidal
LOAD: Resistive
RMS ON-STATE CURRENT [I
T(RMS)]: Maximum
Rated Value at Specified Case Temperature
NOTES:
0
100
200
300
400
500
0
2
4
6
8
10
DC Gate Trigger Current (IGT)—mA
Devices with I
GT
= 80-100ma
T
ypical
T
u
rn-On
Time
(t
gt
)—
Sec
Devices with I
GT
= 20 - 35mA
Devices with I
GT
= 50mA
0123456789
10 11 12 13 14 15 16
0
2
4
6
8
10
12
14
16
18
RMS On-State Current [lT(RMS)]—AMPS
Average
On-State
Power
Dissipation
[P
D(AV)
]—
Watts
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 360
6 - 12 AMP
02
46
8
10
12
14
16
0
2
4
6
8
10
12
14
16
18
RMS On-State Current [I
T(RMS)
] — Amps
A
v
er
age
On-State
P
o
w
e
r
Dissipation
[P
D
(A
V)
]—
W
a
tts
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or inductive
CONDUCTION ANGLE: 360
16 AMP
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 360
012
20
28
36
4
16
24
32
40
8
0
5
10
15
20
25
30
35
40
45
RMS On-State Current [I
T(RMS)
]—Amps
Average
On-State
Power
Dissipation
[P
D(AV)
]—
Watts
40 AMP
25 AMP
120
100
80
60
40
25
20
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
TO-220 DEVICES
RMS On-State Current [IT (RMS)] — Amps
Maximum
Allowable
Ambient
Temperature
(T
A
)
—
C
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 360
FREE AIR RATING – NO HEATSINK
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PDF描述 |
|---|---|
| Q4040P | 400 V, 40 A, ALTERNISTOR TRIAC |
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| Q7016LH6V | 700 V, 16 A, ALTERNISTOR TRIAC, TO-220AB |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| Q4025R5 | 功能描述:双向可控硅 400V 25A 50-50-50mA RoHS:否 制造商:STMicroelectronics 开启状态 RMS 电流 (It RMS):16 A 不重复通态电流:120 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态电压: 保持电流（Ih 最大值）:45 mA 栅触发电压 (Vgt):1.3 V 栅触发电流 (Igt):1.75 mA 最大工作温度: 安装风格:Through Hole 封装 / 箱体:TO-220AB |
| Q4025R6 | 功能描述:双向可控硅 400V 25A RoHS:否 制造商:STMicroelectronics 开启状态 RMS 电流 (It RMS):16 A 不重复通态电流:120 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态电压: 保持电流（Ih 最大值）:45 mA 栅触发电压 (Vgt):1.3 V 栅触发电流 (Igt):1.75 mA 最大工作温度: 安装风格:Through Hole 封装 / 箱体:TO-220AB |
| Q4025R9 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRIAC|400V V(DRM)|25A I(T)RMS|TO-220 |
| Q4025V5 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRIAC|400V V(DRM)|25A I(T)RMS|IST-3FT-1/4 |
| Q4025V6 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRIAC|400V V(DRM)|25A I(T)RMS|IST-3FT-1/4 |
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