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参数资料
| 型号： | Q6006N456 |
| 元件分类： | 晶闸管 |
| 英文描述： | 4 QUADRANT LOGIC LEVEL TRIAC, TO-263AA |
| 封装： | ROHS COMPLIANT, PLASTIC, D2PAK-3 |
| 文件页数： | 8/14页 |
| 文件大小： | 289K |
| 代理商： | Q6006N456 |
63
2008 Littelfuse, Inc.
Revised: July 9, 2008
Teccor brand Thyristors
Specications are subject to change without notice.
Please refer to http://www.littelfuse.com for current information.
Specications are subject to change without notice.
Please refer to http://www.littelfuse.com for current information.
Lxx06xx & Qxx06xx & Qxx06xHx Series
6 Amp Sensitive, Standard & Alternistor (High Commutation) Triacs
6.0A
TRIA
Cs
Electrical Characteristics (T
J = 25°C, unless otherwise specied) — Sensitive Triac (4 Quadrants)
Symbol
Test Conditions
Quadrant
Value
Unit
Lxx06x5
Lxx06x6
Lxx06x8
I
GT
V
D = 12V RL = 60
I – II – III
IV
MAX.
5
10
20
mA
V
GT
ALL
MAX.
1.3
V
GD
V
D = VDRM RL = 3.3 k
T
J = 110°C
ALL
MIN.
0.2
V
I
H
I
T = 100mA
MAX.
10
20
mA
dv/dt
V
D = VDRM Gate Open TJ = 100°C
400V
TYP.
30
40
V/μs
600V
20
30
(dv/dt)c
(di/dt)c = 3.2 A/ms T
J = 110°C
TYP.
1
2
V/μs
t
gt
I
G = 2 x IGT PW = 15μs IT = 8.5 A(pk)
TYP.
3.0
3.2
μs
Electrical Characteristics (T
J = 25°C, unless otherwise specied) — Standard Triac
Symbol
Test Conditions
Quadrant
Value
Unit
Qxx06x4
Qxx06x5
I
GT
V
D = 12V RL = 60
I – II – III
IV
MAX.
TYP.
25
50
75
mA
V
GT
I – II – III
MAX.
1.3
V
GD
V
D = VDRM RL = 3.3 k
T
J = 125°C
ALL
MIN.
0.2
V
I
H
I
T = 200mA
MAX.
50
mA
dv/dt
V
D = VDRM Gate Open TJ = 125°C
400V
MIN.
120
V/μs
600V
100
800V
85
V
D = VDRM Gate Open TJ = 100°C
1000V
100
(dv/dt)c
(di/dt)c = 3.2 A/ms T
J = 125°C
TYP.
4
V/μs
t
gt
I
G = 2 x IGT PW = 15μs IT = 8.5 A(pk)
TYP.
3.0
μs
Electrical Characteristics (T
J = 25°C, unless otherwise specied) — Alternistor Triac (3 Quadrants)
Symbol
Test Conditions
Quadrant
Value
Unit
Qxx06xH3
Qxx06xH4
I
GT
V
D = 12V RL = 60 Ω
I – II – III
MAX.
10
35
mA
V
GT
I – II – III
MAX.
1.3
V
GD
V
D = VDRM RL = 3.3 kΩ TJ = 125°C
I – II – III
MIN.
0.2
V
I
H
I
T = 100mA
MAX.
15
35
mA
dv/dt
V
D = VDRM Gate Open TJ = 125°C
Qxx06VHy /
Qxx06DHy
MIN.
400V
75
400
V/μs
600V
50
300
800V
200
Qxx06LHy /
Qxx06RHy /
Qxx06NHy
400V
75
450
600V
50
350
800V
250
V
D = VDRM Gate Open TJ = 100°C
ALL
1000V
150
(dv/dt)c
(di/dt)c = 3.2 A/ms T
J = 125°C
MIN.
20
25
V/μs
t
gt
I
G = 2 x IGT PW = 15μs IT = 8.5 A(pk)
TYP.
4.0
μs
Note: xx = voltage, x = package, y = sensitivity
相关PDF资料 |
PDF描述 |
|---|---|
| Q6006N556 | 4 QUADRANT LOGIC LEVEL TRIAC, TO-263AA |
| Q6006NH356 | ALTERNISTOR TRIAC, TO-263AA |
| Q8006N456 | 4 QUADRANT LOGIC LEVEL TRIAC, TO-263AA |
| Q8006N556 | 4 QUADRANT LOGIC LEVEL TRIAC, TO-263AA |
| Q8006NH356 | ALTERNISTOR TRIAC, TO-263AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| Q6006N5 | 制造商:LITTELFUSE 制造商全称:Littelfuse 功能描述:Triacs (0.8 A to 35 A) |
| Q6006N5RP | 功能描述:双向可控硅 600V 6A 50-50-50mA RoHS:否 制造商:STMicroelectronics 开启状态 RMS 电流 (It RMS):16 A 不重复通态电流:120 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态电压: 保持电流（Ih 最大值）:45 mA 栅触发电压 (Vgt):1.3 V 栅触发电流 (Igt):1.75 mA 最大工作温度: 安装风格:Through Hole 封装 / 箱体:TO-220AB |
| Q6006NH4 | 制造商:LITTELFUSE 制造商全称:Littelfuse 功能描述:Alternistor Triacs (6 A to 40 A) |
| Q6006NH4RP | 功能描述:双向可控硅 600V 6A 35-35-35mA RoHS:否 制造商:STMicroelectronics 开启状态 RMS 电流 (It RMS):16 A 不重复通态电流:120 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态电压: 保持电流（Ih 最大值）:45 mA 栅触发电压 (Vgt):1.3 V 栅触发电流 (Igt):1.75 mA 最大工作温度: 安装风格:Through Hole 封装 / 箱体:TO-220AB |
| Q6006NH4TP | 功能描述:双向可控硅 600V 6A 35-35-35mA RoHS:否 制造商:STMicroelectronics 开启状态 RMS 电流 (It RMS):16 A 不重复通态电流:120 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态电压: 保持电流（Ih 最大值）:45 mA 栅触发电压 (Vgt):1.3 V 栅触发电流 (Igt):1.75 mA 最大工作温度: 安装风格:Through Hole 封装 / 箱体:TO-220AB |
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