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参数资料
| 型号： | Q62702F1502 |
| 英文描述： | TRANSISTOR R.F SOT343 |
| 中文描述： | 晶体管射频SOT343 |
| 文件页数： | 1/7页 |
| 文件大小： | 58K |
| 代理商： | Q62702F1502 |
Semiconductor Group
1
Dec-12-1996
BFP 182W
NPN Silicon RF Transistor
For low noise, high-gain broadband amplifiers at
collector currents from 1mA to 20mA
fT = 8GHz
F = 1.2dB at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
Package
BFP 182W
RGs
Q62702-F1502
1 = E
2 = C
3 = E
4 = B
SOT-343
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
VCEO
12
V
Collector-emitter voltage
VCES
20
Collector-base voltage
VCBO
20
Emitter-base voltage
VEBO
2
Collector current
IC
35
mA
Base current
IB
4
Total power dissipation
TS ≤ 91 °C
Ptot
250
mW
Junction temperature
Tj
150
°C
Ambient temperature
TA
- 65 ... + 150
Storage temperature
Tstg
- 65 ... + 150
Thermal Resistance
Junction - soldering point
1)
RthJS
≤ 235
K/W
1)
TS is measured on the collector lead at the soldering point to the pcb.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| Q62702-F1502 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA) |
| Q62702F1503 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR R.F SOT343 |
| Q62702-F1503 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA) |
| Q62702F1504 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR R.F SOT343 |
| Q62702-F1504 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) |
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