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参数资料
| 型号： | Q8006LH356 |
| 元件分类： | 晶闸管 |
| 英文描述： | ALTERNISTOR TRIAC, TO-220AB |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 7/14页 |
| 文件大小： | 289K |
| 代理商： | Q8006LH356 |
62
Revised: July 9, 2008
2008 Littelfuse, Inc.
Teccor brand Thyristors
Specications are subject to change without notice.
Please refer to http://www.littelfuse.com for current information.
Specications are subject to change without notice.
Please refer to http://www.littelfuse.com/series/triac.html for current information.
6 Amp Sensitive, Standard & Alternistor (High Commutation) Triacs
Lxx06xx & Qxx06xx & Qxx06xHx Series
Absolute Maximum Ratings — Standard Triac
Symbol
Parameter
Value
Unit
I
T(RMS)
RMS on-state current (full sine wave)
Qxx06Ry / Qxx06Ny
T
C = 95°C
6A
Qxx06Ly
T
C = 90°C
I
TSM
Non repetitive surge peak on-state current
(full cycle, T
J initial = 25°C)
f = 50 Hz
t = 20 ms
65
A
f = 60 Hz
t = 16.7 ms
80
I2tI2t Value for fusing
t
p = 8.3 ms
26.5
A2s
di/dt
Critical rate of rise of on-state current
I
G = 200mA with 0.1μs rise time
f = 120 Hz
T
J = 125°C
70
A/μs
I
GTM
Peak gate trigger current
t
p
10 μs; I
GT
I
GTM
T
J = 125°C
1.6
A
P
G(AV)
Average gate power dissipation
T
J = 125°C
0.5
W
T
stg
Storage temperature range
-40 to 150
°C
T
J
Operating junction temperature range
-40 to 125
°C
Note: xx = voltage, y = sensitivity
Absolute Maximum Ratings — Alternistor Triac (3 Quadrants)
Symbol
Parameter
Value
Unit
I
T(RMS)
RMS on-state current (full sine wave)
Qxx06LHy
T
C = 95°C
6A
Qxx06RHy / Qxx06NHy
Qxx06VHy / Qxx06DHy
T
C = 100°C
I
TSM
Non repetitive surge peak on-state current
(full cycle, T
J initial = 25°C)
f = 50 Hz
t = 20 ms
Qxx06VHy
Qxx06DHy
55
A
Qxx06LHy
Qxx06RHy
Qxx06NHy
80
f = 60 Hz
t = 16.7 ms
Qxx06VHy
Qxx06DHy
65
Qxx06LHy
Qxx06RHy
Qxx06NHy
85
I2tI2t Value for fusing
t
p = 8.3 ms
Qxx06VHy
Qxx06DHy
17.5
A2s
Qxx06LHy
Qxx06RHy
Qxx06NHy
30
di/dt
Critical rate of rise of on-state current
f = 120 Hz
T
J = 125°C
70
A/μs
I
GTM
Peak gate trigger current
t
p
10 μs; I
GT
I
GTM
T
J = 125°C
1.6
A
P
G(AV)
Average gate power dissipation
T
J = 125°C
0.5
W
T
stg
Storage temperature range
-40 to 150
°C
T
J
Operating junction temperature range
-40 to 125
°C
Note: xx = voltage, y = sensitivity
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| Q8006LH4TP | 功能描述:双向可控硅 Altnstr 800V 6A 35-35-35 mA RoHS:否 制造商:STMicroelectronics 开启状态 RMS 电流 (It RMS):16 A 不重复通态电流:120 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态电压: 保持电流（Ih 最大值）:45 mA 栅触发电压 (Vgt):1.3 V 栅触发电流 (Igt):1.75 mA 最大工作温度: 安装风格:Through Hole 封装 / 箱体:TO-220AB |
| Q8006N5 | 制造商:LITTELFUSE 制造商全称:Littelfuse 功能描述:Triacs (0.8 A to 35 A) |
| Q8006N5RP | 功能描述:双向可控硅 800V 6A 50-50-50mA RoHS:否 制造商:STMicroelectronics 开启状态 RMS 电流 (It RMS):16 A 不重复通态电流:120 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态电压: 保持电流（Ih 最大值）:45 mA 栅触发电压 (Vgt):1.3 V 栅触发电流 (Igt):1.75 mA 最大工作温度: 安装风格:Through Hole 封装 / 箱体:TO-220AB |
| Q8006N5TP | 功能描述:双向可控硅 800V 6A 50-50-50mA RoHS:否 制造商:STMicroelectronics 开启状态 RMS 电流 (It RMS):16 A 不重复通态电流:120 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态电压: 保持电流（Ih 最大值）:45 mA 栅触发电压 (Vgt):1.3 V 栅触发电流 (Igt):1.75 mA 最大工作温度: 安装风格:Through Hole 封装 / 箱体:TO-220AB |
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