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参数资料
| 型号： | Q8006VH356 |
| 元件分类： | 晶闸管 |
| 英文描述： | ALTERNISTOR TRIAC, TO-251AA |
| 封装： | ROHS COMPLIANT, PLASTIC, VPAK-3 |
| 文件页数： | 10/14页 |
| 文件大小： | 289K |
| 代理商： | Q8006VH356 |
65
2008 Littelfuse, Inc.
Revised: July 9, 2008
Teccor brand Thyristors
Specications are subject to change without notice.
Please refer to http://www.littelfuse.com for current information.
Specications are subject to change without notice.
Please refer to http://www.littelfuse.com for current information.
Lxx06xx & Qxx06xx & Qxx06xHx Series
6 Amp Sensitive, Standard & Alternistor (High Commutation) Triacs
6.0A
TRIA
Cs
Figure 3: Normalized DC Holding Current
vs. Junction Temperature
Figure 4: Normalized DC Gate Trigger Voltage for
All Quadrants vs. Junction Temperature
Junction Temperature (T
J)- °C
-65
-40
-15
10
35
60
85
110
125
4.0
3.0
2.0
1.0
0.0
Ratio
of
I H
(T
J
=
2
5
°C)
Junction Temperature (T
J)- °C
-65
-40
-15
10
35
60
85
110
125
4.0
3.0
2.0
1.0
0.0
Ratio
of
I H
(T
J
=
2
5
°C)
Figure 7: Maximum Allowable Case Temperature
vs. On-State Current (Standard Triac)
Figure 8: Maximum Allowable Case Temperature
vs. On-State Current (Alternistor Triac)
RMS On-State Current (I
T(RMS)) - Amps
7
6
5
4
3
2
1
0
130
120
110
100
90
80
70
60
Maximum
Allo
w
able
Case
Te
mper
at
ur
e
(T
C
)-
°C
Qxx06RHy
Qxx06NHy
Qxx06VHy
Qxx06DHy
Qxx06LHy
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 360°
CASE TEMPERATURE: Measured as shown
on Dimensional Drawings
RMS On-State Current (I
T(RMS)) - Amps
02468
10
12
14
16
0
2
4
6
8
10
12
14
16
18
A
v
er
ag
e
On-Stat
e
P
o
w
er
Dissipation
(P
D(A
V)
)-
W
a
tt
s
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 360°
Figure 5: Power Dissipation (Typical)
vs. RMS On-State Current
Figure 6: Maximum Allowable Case Temperature
vs. On-State Current (Sensitive Triac)
RMS On-State Current (I
T(RMS)) - Amps
7
6
5
4
3
2
1
0
120
110
100
90
80
70
60
Maximum
Allo
w
able
Case
Temper
at
ur
e
(T
C
)-
°C
Lxx06Vy
Lxx06Dy
Lxx06Ry
Lxx06Ly
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 360°
CASE TEMPERATURE: Measured as shown
on Dimensional Drawings
RMS On-State Current (I
T(RMS)) - Amps
7
6
5
4
3
2
1
0
130
120
110
100
90
80
70
60
Maximum
Allo
w
able
Case
Te
mper
at
ur
e
(T
C
)-
°C
Qxx06Ly
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 360°
CASE TEMPERATURE: Measured as shown
on Dimensional Drawings
Qxx06Ry
Qxx06Ny
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相关代理商/技术参数 |
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| Q8006VH4TP | 功能描述:双向可控硅 Altnstr 800V 6A RoHS:否 制造商:STMicroelectronics 开启状态 RMS 电流 (It RMS):16 A 不重复通态电流:120 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态电压: 保持电流（Ih 最大值）:45 mA 栅触发电压 (Vgt):1.3 V 栅触发电流 (Igt):1.75 mA 最大工作温度: 安装风格:Through Hole 封装 / 箱体:TO-220AB |
| Q8008DH3 | 功能描述:双向可控硅 800V 8A RoHS:否 制造商:STMicroelectronics 开启状态 RMS 电流 (It RMS):16 A 不重复通态电流:120 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态电压: 保持电流（Ih 最大值）:45 mA 栅触发电压 (Vgt):1.3 V 栅触发电流 (Igt):1.75 mA 最大工作温度: 安装风格:Through Hole 封装 / 箱体:TO-220AB |
| Q8008DH4 | 功能描述:双向可控硅 800V 8A RoHS:否 制造商:STMicroelectronics 开启状态 RMS 电流 (It RMS):16 A 不重复通态电流:120 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态电压: 保持电流（Ih 最大值）:45 mA 栅触发电压 (Vgt):1.3 V 栅触发电流 (Igt):1.75 mA 最大工作温度: 安装风格:Through Hole 封装 / 箱体:TO-220AB |
| Q8008DH4RP | 功能描述:双向可控硅 Altnstr 800V 8A RoHS:否 制造商:STMicroelectronics 开启状态 RMS 电流 (It RMS):16 A 不重复通态电流:120 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态电压: 保持电流（Ih 最大值）:45 mA 栅触发电压 (Vgt):1.3 V 栅触发电流 (Igt):1.75 mA 最大工作温度: 安装风格:Through Hole 封装 / 箱体:TO-220AB |
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