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参数资料
| 型号： | Q8010N4 |
| 元件分类： | 晶闸管 |
| 英文描述： | 800 V, 10 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-263AB |
| 封装： | TO-263, D2PAK-3 |
| 文件页数： | 9/10页 |
| 文件大小： | 228K |
| 代理商： | Q8010N4 |
Triacs
Data Sheets
http://www.teccor.com
E2 - 8
2004 Teccor Electronics
+1 972-580-7777
Thyristor Product Catalog
Figure E2.7 Maximum Allowable Ambient Temperature versus
On-state Current
Figure E2.8 On-state Current versus On-state Voltage (Typical)
(0.8 A and 1 A)
Figure E2.9 On-state Current versus On-state Voltage (Typical)
(4 A, 6 A, 8 A, and 10 A)
Figure E2.10 On-state Current versus On-state Voltage (Typical)
(15 A and 25 A)
Figure E2.11 Normalized DC Gate Trigger Current for All Quadrants
versus Case Temperature
Figure E2.12 Normalized DC Gate Trigger Voltage for All Quadrants
versus Case Temperature
120
100
80
60
40
25
20
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
TO-220 Devices and
TO-202 (Type 1 and 3)
RMS On-state Current [IT (RMS)] — Amps
Maximum
Allowable
Ambient
Temperature
(T
A
)—
C
1 A TO-92
0.8 A TO-92
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 360
FREE AIR RATING – NO HEATSINK
TO-202 (TYPE 2 and 4)
TO-251
0
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
1
2
3
4
5
6
7
8
9
10
Positive or Negative Instantaneous On-state Voltage (v
T) – Volts
Positive
or
Negative
Instantaneous
On-state
Current
(i
T
)–
Amps
T
C = 25 C
1 A
0.8 A
0
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
2
4
6
8
10
12
14
16
18
20
Positive or Negative Instantaneous On-state Voltage (v
T) – Volts
Positive
or
Negative
Instantaneous
On-state
Current
(i
T
)–
Amps
T
C = 25 C
6-10 A
4A
0
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
10
20
30
40
50
60
70
80
90
Positive or Negative Instantaneous On-state Voltage (v
T) – Volts
Positive
or
Negative
Instantaneous
On-state
Current
(i
T
)–
Amps
T
C = 25 C
15 A and 25 A
25 A and 35 A Fastpak
-65
-40
-15
+25
+65
+125
1.0
2.0
3.0
4.0
Case Temperature (T
C) – C
Ratio
of
I GT
(T
C
=
25
C)
-65
-15
-40
+25
+65
+125
0
.5
1.0
1.5
2.0
Case Temperature (TC) – C
Ratio
of
V
GT
V
GT
(T
C
=
25
C)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| Q8010N4RP | 功能描述:双向可控硅 800V 10A 25-25-25mA RoHS:否 制造商:STMicroelectronics 开启状态 RMS 电流 (It RMS):16 A 不重复通态电流:120 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态电压: 保持电流（Ih 最大值）:45 mA 栅触发电压 (Vgt):1.3 V 栅触发电流 (Igt):1.75 mA 最大工作温度: 安装风格:Through Hole 封装 / 箱体:TO-220AB |
| Q8010N4TP | 功能描述:双向可控硅 800V 10A RoHS:否 制造商:STMicroelectronics 开启状态 RMS 电流 (It RMS):16 A 不重复通态电流:120 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态电压: 保持电流（Ih 最大值）:45 mA 栅触发电压 (Vgt):1.3 V 栅触发电流 (Igt):1.75 mA 最大工作温度: 安装风格:Through Hole 封装 / 箱体:TO-220AB |
| Q8010N5 | 制造商:LITTELFUSE 制造商全称:Littelfuse 功能描述:Triacs (0.8 A to 35 A) |
| Q8010N5RP | 功能描述:双向可控硅 800V 10A 50-50-50mA RoHS:否 制造商:STMicroelectronics 开启状态 RMS 电流 (It RMS):16 A 不重复通态电流:120 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态电压: 保持电流（Ih 最大值）:45 mA 栅触发电压 (Vgt):1.3 V 栅触发电流 (Igt):1.75 mA 最大工作温度: 安装风格:Through Hole 封装 / 箱体:TO-220AB |
| Q8010N5TP | 功能描述:双向可控硅 800V 10A 50-50-50mA RoHS:否 制造商:STMicroelectronics 开启状态 RMS 电流 (It RMS):16 A 不重复通态电流:120 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态电压: 保持电流（Ih 最大值）:45 mA 栅触发电压 (Vgt):1.3 V 栅触发电流 (Igt):1.75 mA 最大工作温度: 安装风格:Through Hole 封装 / 箱体:TO-220AB |
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