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参数资料
| 型号： | Q8025K6V |
| 元件分类： | 晶闸管 |
| 英文描述： | 25 A, ALTERNISTOR TRIAC |
| 封装： | ISOLATED TO-218AC, 3 PIN |
| 文件页数： | 6/8页 |
| 文件大小： | 276K |
| 代理商： | Q8025K6V |
Electrical Specifications
Alternistor Triacs
4-6
Teccor Electronics, Inc.
(972) 580-7777
Figure 4.7
Normalized DC Gate Trigger Voltage for all Quadrants vs
Case Temperature
Figure 4.8
Normalized DC Gate Trigger Current for all Quadrants vs
Case Temperature
Figure 4.9
Normalized DC Holding Current vs Case Temperature
Figure 4.10
Peak Surge Current vs Surge Current Duration
(6-12 Amp Devices)
Figure 4.11
Peak Surge Current vs Surge Current Duration
(15-40 Amp Devices)
Figure 4.12
Turn-On Time vs Gate Trigger Current (Typical)
0
.5
1.0
1.5
2.0
-65
-15
+65
+25
+125
-40
Case Temperature (TC) — C
V
GT
(T
C
=25C)
Ratio
of
V
GT
0
1.0
2.0
3.0
4.0
-65
-15
+65
+25
+125
-40
Case Temperature (TC) — C
I GT
(T
C
=25C)
Ratio
of
I GT
0
1.0
2.0
3.0
4.0
-65
-15
+65
+25
+125
-40
Case Temperature (TC) — C
I H
(T
C
=25C)
Ratio
of
I H
INITIAL ON-STATE CURRENT
= 400mA (DC) 15-40A devices
= 100mA (DC) 6-12A devices
200
120
40
1
2
3 45 6
8 10
20
3040
60 80 100
200
300
600
1000
80
60
50
100
8
6
5
10
30
20
4
1
3
2
Surge Current Duration — Full Cycles
Peak
Surge
(Non-Repetitive)
On-State
Current
(I
TSM
)—
Amps
SUPPLY FREQUENCY: 60 Hz Sinusoidal
LOAD: Resistive
RMS ON-STATE CURRENT [IT(RMS)]: Maximum
Rated Value at Specified Case Temperature
NOTES:
1) GATE CONTROL MAY BE LOST
DURING AND IMMEDIATELY
FOLOWING SURGE CURRENT
INTERVAL.
2) OVERLOAD MAY NOT BE REPEATED
UNTIL JUNCTION TEMPERATURE
HAS RETURNED TO STEADY STATE
RATED VALUE.
10 Amp Device
12 Amp Device
6 Amp Device
8 Amp Device
40 AMP
25 AMP
15 AMP
110
100
1000
10
20
30
40
50
60
80
100
250
300
400
1000
Surge Current Duration — Full Cycles
P
eak
Surge
(Non-Repetitive)
On-State
Current
(I
TSM
)—Amps
200
1) GATE CONTROL MAY BE LOST
DURING AND IMMEDIATELY
FOLLOWING SURGE CURRENT
INTERVAL.
2) OVERLOAD MAY NOT BE
REPEATED UNTIL JUNCTION
TEMPERATURE HAS RETURNED
TO STEADY-STATE RATED VALUE.
SUPPLY FREQUENCY: 60Hz Sinusoidal
LOAD: Resistive
RMS ON-STATE CURRENT [I
T(RMS)]: Maximum
Rated Value at Specified Case Temperature
NOTES:
0
100
200
300
400
500
0
2
4
6
8
10
DC Gate Trigger Current (IGT)—mA
Devices with I
GT
= 80 - 100mA
T
ypical
T
u
rn-On
Time
(t
gt
)—Sec
Devices with I
GT
= 35 - 50mA
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相关代理商/技术参数 |
参数描述 |
|---|---|
| Q8025L6 | 功能描述:双向可控硅 800V 25A RoHS:否 制造商:STMicroelectronics 开启状态 RMS 电流 (It RMS):16 A 不重复通态电流:120 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态电压: 保持电流（Ih 最大值）:45 mA 栅触发电压 (Vgt):1.3 V 栅触发电流 (Igt):1.75 mA 最大工作温度: 安装风格:Through Hole 封装 / 箱体:TO-220AB |
| Q8025L6 | 制造商:Littelfuse 功能描述:Triac |
| Q8025L6 | 制造商:Littelfuse 功能描述:TRIAC THYRISTOR |
| Q8025L665 | 功能描述:双向可控硅 Altnstr 800V 25A 80-80-80 mA RoHS:否 制造商:STMicroelectronics 开启状态 RMS 电流 (It RMS):16 A 不重复通态电流:120 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态电压: 保持电流（Ih 最大值）:45 mA 栅触发电压 (Vgt):1.3 V 栅触发电流 (Igt):1.75 mA 最大工作温度: 安装风格:Through Hole 封装 / 箱体:TO-220AB |
| Q8025L6V | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRIAC|800V V(DRM)|25A I(T)RMS|TO-220AB |
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