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参数资料
| 型号： | QCK5 |
| 厂商： | QT OPTOELECTRONICS |
| 元件分类： | 开关 |
| 英文描述： | 4 mm SLOT WIDTH, 1 CHANNEL SLOTTED OPTICAL SWITCH TRANSISTOR OUTPUT |
| 文件页数： | 2/4页 |
| 文件大小： | 250K |
| 代理商： | QCK5 |
PARAMETER
TEST CONDITIONS
SYMBOL
MIN
TYP
MAX
UNITS
EMITTER
Forward Voltage
IF = 20 mA
VF
——
1.7
V
Reverse Current
VR = 5 V
IR
——
100
A
Peak Emission Wavelength
IF = 20 mA
!
PE
—
940
—
nm
SENSOR
Collector-Emitter Breakdown
IC = 1 mA
BVCEO
30
——
V
Emitter-Collector Breakdown
IE = 0.1 mA
BVECO
5
——
V
Dark Current
VCE = 10 V, IF = 0 mA
ID
——
100
nA
COUPLED
Collector Current
IF = 20 mA, VCE = 5 V
IC(ON)
2.0
——
mA
Collector Emitter
IF = 20 mA, IC = 0.5 mA
VCE (SAT)
——
0.4
V
Saturation Voltage
Rise Time
VCE = 5 V, RL = 100
"
tr
—
8
—
s
Fall Time
IC = 5 mA
tf
—
50
—
s
QCK5
PHOTOTRANSISTOR OPTICAL
INTERRUPTER SWITCH
2 of 4
100010F
ELECTRICAL / OPTICAL CHARACTERISTICS (TA = 25°C)
Fig. 2 Forward Current vs. Forward Voltage
VF - Forward Voltage (V)
1.0
1.1
1.2
1.3
1.4
1.5
1.6
I F
-
F
o
rw
ard
Current
(mA)
0
20
40
60
80
100
Fig. 1 Forward Voltage vs. Ambient Temperature
TA - Ambient Temperature (
o
C)
-40
-20
0
20
40
60
80
100
V
F-
F
o
rw
ard
V
o
ltage
(V)
0
1
2
3
Fig. 3 Collector Emitter Dark Current (Normalized)
vs. Ambient Temperature
TA -Ambient Temperature (
o
C)
40
60
80
100
I CEO
-Nor
maliz
ed
Dar
k
Current
10-1
100
101
102
103
104
Fig. 4 Rise and Fall Time vs. Load Resistance
RL-Load Resistance (")
10
100
1000
Rise
and
F
a
ll
Time
(s)
0.1
1
10
100
IF Pulsed
Pulse Width = 100 s
Duty Cycle = 0.1%
tf
tr
VCC= 5 V
IC = 0.5 mA
tpw= 100 us
T = 10 ms
TA = 25C
tr
tf
IF = 50 mA
IF = 10 mA
Normalized to:
VCE = 25 V
VCE = 10 V
IF = 20 mA
IF = 100 mA
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