参数资料
型号: QEB421.TR
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: 红外LED
英文描述: 2.4 mm, 1 ELEMENT, INFRARED LED, 880 nm
封装: PLASTIC, LCC-2
文件页数: 2/4页
文件大小: 92K
代理商: QEB421.TR
QEB421
SURFACE MOUNT INFRARED
LIGHT EMITTING DIODE
Fig. 4 Forward Voltage vs. Ambient Temperature
Fig. 5 Spectral Response (TBD)
TA - TEMPERATURE (C)
-40
-20
0
20
40
60
80
100
V
F
-FOR
W
ARD
V
O
LT
A
GE
(V)
0
1
2
3
IF = 50 mA
IF
t
Pulsed
pw = 100 us
Duty Cycle = 0.1%
I = 100 mA
F
IF = 20 mA
Fig. 1 Normalized Radiant Intensity vs. Forward Current
IF - FORWARD CURRENT (mA)
1
10
100
1000
I e
-NORMALIZED
RADIANT
INTENSITY
0.001
0.01
0.1
1
10
Normalized to:
IF = 100 mA Pulsed
tpw =100 us
Duty Cycle = 0.1%
TA = 25C
Fig. 2 Forward Current vs. Forward Voltage
VF - FORWARD VOLTAGE (V)
0.8
1.0
1.2
1.4
1.6
I F
-FOR
W
ARD
CURRENT
(mA)
10-3
10-2
10-1
100
101
102
IF Pulsed
tpw = 100 us
Duty Cycle = 0.1%
TA = 25C
Fig.3 Radiation Diagram
0.0
0.2
0.4
0.6
0.8
1.0
0.0
0.2
0.4
0.6
0.8
1.0
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
160
170
180
TYPICAL PERFORMANCE CURVES
www.fairchildsemi.com
2 OF 3
2/26/01
DS300385
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